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M29W640DB Datasheet, Equivalent, Flash Memory.

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

 

 

 

Part M29W640DB
Description 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory
Feature M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4 Mb x16, Boot Block) 3V Supply Flash Mem ory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.
7V to 3.
6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figur e 1.
Packages ACCESS TIME: 70, 90 ns P ROGRAMMING TIME – 10 µs per Byte/Wor d typical – Double Word Programming O ption s 135 MEMORY BLOCKS – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) – 127 M ain Blocks, 64 KBytes each TSOP48 (N) 1 2 x 20mm s PROGRAM/ERASE CONTROLLER Embedded Byte/Word Program algorithm s ERASE SUSPEND and RESUME MO .
Manufacture ST Microelectronics
Datasheet
Download M29W640DB Datasheet
Part M29W640DB
Description 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory
Feature M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4 Mb x16, Boot Block) 3V Supply Flash Mem ory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.
7V to 3.
6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figur e 1.
Packages ACCESS TIME: 70, 90 ns P ROGRAMMING TIME – 10 µs per Byte/Wor d typical – Double Word Programming O ption s 135 MEMORY BLOCKS – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) – 127 M ain Blocks, 64 KBytes each TSOP48 (N) 1 2 x 20mm s PROGRAM/ERASE CONTROLLER Embedded Byte/Word Program algorithm s ERASE SUSPEND and RESUME MO .
Manufacture ST Microelectronics
Datasheet
Download M29W640DB Datasheet

M29W640DB

M29W640DB
M29W640DB

M29W640DB

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