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M29W640DB Datasheet, Equivalent, Flash Memory.64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory |
　
　
　
| Part | M29W640DB |
|---|---|
| Description | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory |
| Feature | M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4 Mb x16, Boot Block) 3V Supply Flash Mem ory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2. 7V to 3. 6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figur e 1. Packages ACCESS TIME: 70, 90 ns P ROGRAMMING TIME – 10 µs per Byte/Wor d typical – Double Word Programming O ption s 135 MEMORY BLOCKS – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) – 127 M ain Blocks, 64 KBytes each TSOP48 (N) 1 2 x 20mm s PROGRAM/ERASE CONTROLLER â €“ Embedded Byte/Word Program algorithm s ERASE SUSPEND and RESUME MO . |
| Manufacture | ST Microelectronics |
| Datasheet |
| Part | M29W640DB |
|---|---|
| Description | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory |
| Feature | M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4 Mb x16, Boot Block) 3V Supply Flash Mem ory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2. 7V to 3. 6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figur e 1. Packages ACCESS TIME: 70, 90 ns P ROGRAMMING TIME – 10 µs per Byte/Wor d typical – Double Word Programming O ption s 135 MEMORY BLOCKS – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) – 127 M ain Blocks, 64 KBytes each TSOP48 (N) 1 2 x 20mm s PROGRAM/ERASE CONTROLLER â €“ Embedded Byte/Word Program algorithm s ERASE SUSPEND and RESUME MO . |
| Manufacture | ST Microelectronics |
| Datasheet |
　
　
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