MMBD301 Barrier Diode Datasheet

MMBD301 Datasheet, PDF, Equivalent


Part Number

MMBD301

Description

Schottky Barrier Diode

Manufacture

Fairchild

Total Page 8 Pages
Datasheet
Download MMBD301 Datasheet


MMBD301
PACKAGE
SOT-23
TO-236AB (Low)
MMBD301
3
4T
12
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
CONNECTION DIAGRAM
3
1 2 NC
PACKAGE
SOT-23
TO236AB
Schottky Barrier Diode
Sourced from Process GD
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Sym
Parameter
Value
Tstg Storage Temperature
TJ Operating Junction Temperature
Wiv Working Inverse Voltage
PF Forward Power Dissipation @ TA = 25OC
Derate above 25OC
-55 to +150
-55 to +125
25
200
2.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Units
OC
OC
V
mW
Mw/OC
Electrical Characteristics TA = 25OC unless otherwise noted
SYM
CHARACTERISTICS
BV Breakdown Voltage
IR Reverse Leakage
VF Forward Voltage
CT Capacitance
MIN MAX UNITS
TEST CONDITIONS
30
200
450
600
1.5
V IR = 10 uA
nA VR = 25 V
mV IF = 1.0 mA
mV IF = 10 mA
pF VR = 15 V
f = 1.0 MHz
© 1997 Fairchild Semiconductor Corporation

MMBD301
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
0.098 (2.489)
0.083 (2.108)
0.019 (0.483)
0.015 (0.381)
3
3 CHARACTERS MAX
0.055 (1.397)
0.047 (1.194)
0.040 (1.016)
0.035 (0.889)
12
0.080 (2.032)
0.070 (1.778)
0.120 (3.048)
0.110 (2.794)
0.024 (0.810)
0.018 (0.457)
LOW PROFILE 0.041 (1.041)
(49) 0.035 (0.889)
LOW PROFILE 0.0040 (0.102)
(49) 0.0005 (0.013)
0.0059 (0.150)
0.0035 (0.089)
SOT-23
TO-236AB (LOW PROFILE)
22-August-1994


Features MMBD301 3 DISCRETE POWER AND SIGNAL TEC HNOLOGIES CONNECTION DIAGRAM 3 PACKAGE SOT-23 TO-236AB (Low) 1 4T 1 2 NC SOT -23 TO236AB 2 PACKAGE Schottky Barri er Diode Sourced from Process GD Absol ute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Par ameter Storage Temperature Operating Ju nction Temperature Working Inverse Volt age Forward Power Dissipation @ TA = 25 OC Derate above 25OC Value -55 to +150 -55 to +125 25 200 2.0 Units OC OC V mW Mw/OC *These ratings are limiting values above which the serviceability o f any semiconductor device may be impai red Electrical Characteristics SYM TA = 25OC unless otherwise noted CHARACT ERISTICS MIN 30 MAX UNITS V IR TEST CONDITIONS = 10 uA 25 V 1.0 mA 10 mA 1 5 V 1.0 MHz BV Breakdown Voltage IR Re verse Leakage VF Forward Voltage CT Cap acitance © 1997 Fairchild Semiconducto r Corporation 200 450 600 1.5 nA mV m V pF VR = IF = IF = VR = f = DISCRETE POWER AND SIGNAL TECHNOLOGIES 0.019 (0.483) 0.015 (0.381) 3 .
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