MMBD301L SWITCHING DIODES Datasheet

MMBD301L Datasheet, PDF, Equivalent


Part Number

MMBD301L

Description

SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBD301L Datasheet


MMBD301L
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
Order this document
by MBD301/D
MBD301
MMBD301LT1
Motorola Preferred Devices
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
MBD301
MMBD301LT1
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 30 Volts
PF
280
2.8
200 mW
2.0 mW/°C
Operating Junction
Temperature Range
TJ °C
– 55 to +125
Storage Temperature Range
DEVICE MARKING
Tstg
– 55 to +150
°C
MMBD301LT1 = 4T
1
2
CASE 182– 02, STYLE 1
(TO–226AC)
2
CATHODE
1
ANODE
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
3
CATHODE
1
ANODE
Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (VR = 25 V) Figure 3
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
V(BR)R
CT
IR
VF
VF
30
— — Volts
0.9 1.5 pF
13 200 nAdc
0.38 0.45 Vdc
0.52 0.6 Vdc
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1

MMBD301L
MBD301 MMBD301LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.8 500
f = 1.0 MHz
2.4
400
2.0 KRAKAUER METHOD
1.6 300
1.2 200
0.8
100
0.4
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
1.0
0.1
0.01
0.001
0
TA = 100°C
75°C
25°C
6.0 12 18 24
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
100
10
TA = 85°C
TA = – 40°C
1.0
TA = 25°C
0.1
30 0.2
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
1.2
SINUSOIDAL
GENERATOR
IF(PEAK)
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
BALLAST
NETWORK
(PADS)
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
SAMPLING
OSCILLOSCOPE
W(50 INPUT)
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD301/D Silico n Hot-Carrier Diodes Schottky Barrier D iodes These devices are designed primar ily for high–efficiency UHF and VHF d etector applications. They are readily adaptable to many other fast switching RF and digital applications. They are s upplied in an inexpensive plastic packa ge for low–cost, high–volume consum er and industrial/commercial requiremen ts. They are also available in a Surfac e Mount package. • Extremely Low Mino rity Carrier Lifetime – 15 ps (Typ) Very Low Capacitance – 1.5 pF (Max ) @ VR = 15 V • Low Reverse Leakage IR = 13 nAdc (Typ) MBD301, MMBD301 MBD301 MMBD301LT1 Motorola Preferred De vices 30 VOLTS SILICON HOT–CARRIER D ETECTOR AND SWITCHING DIODES 1 2 MAXI MUM RATINGS (TJ = 125°C unless otherwi se noted) MBD301 Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ – 55 to +125 Tstg .
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