MMBD352 Mixer Diodes Datasheet

MMBD352 Datasheet, PDF, Equivalent


Part Number

MMBD352

Description

Dual Hot Carrier Mixer Diodes

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBD352 Datasheet


MMBD352
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable
also for use in detector and ultra–fast switching circuits.
Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
THERMAL CHARACTERISTICS
VR 7.0 VCC
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symb Min Max Unit
ol
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 3.0 V)
(VR = 7.0 V)
Capacitance
(VR = 0 V, f = 1.0 MHz)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
VF — 0.60 V
IR mA
— 0.25
— 10
C — 1.0 pF
Order this document
by MMBD352LT1/D
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
3
1
2
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD352LT1
CASE 318 – 08, STYLE 11
SOT– 23 (TO – 236AB)
1
CATHODE 3
CATHODE/ANODE
2
ANODE
MMBD353LT1
CASE 318 – 08, STYLE 19
SOT– 23 (TO – 236AB)
3
CATHODE
ANODE
1
2
ANODE
MMBD354LT1
CASE 318 – 08, STYLE 9
SOT– 23 (TO – 236AB)
ANODE
3
CATHODE
1
2
CATHODE
MMBD355LT1
CASE 318 – 08, STYLE 12
SOT– 23 (TO – 236AB)
Thermal Clad is a trademark of the Bergquist Company
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1

MMBD352
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
TYPICAL CHARACTERISTICS
100 1.0
TA = 85°C
10
TA = –40°C
1.0
TA = 25°C
0.9
0.8
0.7
0.1
0.3
0.4 0.5 0.6 0.7
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.8
0.6
0
1.0 2.0 3.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
4.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Du al Hot Carrier Mixer Diodes These devic es are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switc hing circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA MMBD352LT1 MMBD353LT1 MM BD354LT1 MMBD355LT1 3 1 2 MAXIMUM RATI NGS (EACH DIODE) Rating Continuous Reve rse Voltage Symbol VR Value 7.0 Unit VC C 1 ANODE 3 CATHODE/ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) TA = 25°C Derate above 25°C Therm al Resistance, Junction to Ambient Tota l Device Dissipation Alumina Substrate( 2) TA = 25°C Derate above 25°C Therma l Resistance, Junction to Ambient Junct ion and Storage Temperature Symbol PD M ax 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C MMBD352LT1 CASE 318 – 08, STYLE 11 SOT– 23 (TO – 236AB) 1.
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