MMBR571LT1 High-Frequency Transistors Datasheet

MMBR571LT1 Datasheet, PDF, Equivalent


Part Number

MMBR571LT1

Description

NPN Silicon High-Frequency Transistors

Manufacture

Motorola

Total Page 16 Pages
Datasheet
Download MMBR571LT1 Datasheet


MMBR571LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistors
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic packages. This
Motorola series of small–signal plastic transistors offers superior quality and
performance at low cost.
High Gain–Bandwidth Product
fT = 8.0 GHz (Typ) @ 50 mA
Low Noise Figure
NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)
High Gain
GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)
High Power Gain
Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1)
State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
Order this document
by MMBR571LT1/D
MMBR571LT1
MRF571
MRF5711LT1
IC = 80 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR571LT1
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ Tcase = 75°C
MMBR571LT1, MRF5711LT1
Derate linearly above Tcase = 75°C @
Total Device Dissipation (1) @ TC = 75°C
Derate above 75°C
MRF571
VCEO
VCBO
VEBO
IC
PD(max)
PD
Operating and Storage Temperature
Tstg
Value
10
20
3.0
80
0.33
4.44
0.58
7.73
– 55 to
+150
Unit
Vdc
Vdc
Vdc
mA
W
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
MRF5711LT1, MMBR571LT1
Thermal Resistance, Junction to Case
MRF571
Maximum Junction Temperature
DEVICE MARKING
MMBR571LT1 = 7X
MRF5711LT1 = 02
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
CASE 317–01, STYLE 2
MACRO–X
MRF571
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5711LT1
Symbol
RθJC
RθJC
TJmax
Max
225
130
150
Unit
°C/W
°C/W
°C
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MMBR571LT1 MRF571 MRF5711LT1
1

MMBR571LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 50 µAdc, IC = 0)
Collector Cutoff Current (VCB = 8.0 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
10
12
— Vdc
V(BR)CBO
20
— Vdc
V(BR)EBO
2.5
— Vdc
ICBO
10 µAdc
DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE 50 — 300 —
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
Current Gain–Bandwidth Produc
(VCE = 5.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
(VCE = 8.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
MMBR571LT1
MRF5711LT1, MRF571
MMBR571LT1
MRF5711LT1, MRF571
Ccb
fT
pF
— 0.7 1.0
— 0.75 1.0
GHz
— 8.0 —
— 8.0 —
FUNCTIONAL TESTS
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 6.0 Vdc)
Noise Figure
(IC = 10 mAdc, VCE = 6.0 Vdc)
MRF571
MRF571
MRF571
MRF571
f = 0.5 GHz
f = 1.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
GNF
NF
— 16.5 —
10 12 —
— 1.0 —
— 1.5 2.0
— 2.8 —
dB
dB
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 10 mA, VCE = 6.0 Vdc)
MMBR571LT1
MRF5711LT1
f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
GNF
— 16.5 —
— 10.5 —
— 13.5 —
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 6.0 Vdc)
MMBR571LT1
MRF5711LT1
f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
NF
— 2.0 —
— 2.6 —
— 2.2 —
Noise Figure
(VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz) MRF5711LT1
NFmin
1.6
Power Gain in 50 System (VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
MRF5711LT1
|S21|2
9.0
10
dB
dB
dB
dB
TYPICAL CHARACTERISTICS
MMBR571LT1
25 10
+ " Ǹ w20
GAMAX
|S21|
|S12| (k
(k2 1) ), k 1
8
15
VCE = 5 V
6
IC = 30 mA
10 4
5
0
0.4 0.6
12
f, FREQUENCY (GHz)
3
Figure 1. Maximum Available Gain
versus Frequency
2 VCE = 5 V
f = 1 GHz
0
0 10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 2. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
MMBR571LT1 MRF571 MRF5711LT1
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR571LT1/D Th e RF Line NPN Silicon High-Frequency T ransistors Designed for low noise, wide dynamic range front–end amplifiers a nd low–noise VCO’s. Available in a surface–mountable plastic packages. T his Motorola series of small–signal p lastic transistors offers superior qual ity and performance at low cost. • Hi gh Gain–Bandwidth Product fT = 8.0 GH z (Typ) @ 50 mA • Low Noise Figure NF min = 1.6 dB (Typ) @ f = 1.0 GHz (MRF57 11LT1, MRF571) • High Gain GNF = 17 d B (Typ) @ 30 mA/500 MHz (MMBR571LT1) High Power Gain Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1) • State–of– the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nit ride Passivation • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MMBR571LT1 MRF57 1 MRF5711LT1 IC = 80 mA LOW NOISE HIGH FREQUENCY TRANSISTORS CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MMBR571LT1 MAXIMUM RATINGS Rati.
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