Purpose Amplifier. MMBT2907 Datasheet


MMBT2907 Amplifier. Datasheet pdf. Equivalent


MMBT2907


PNP General Purpose Amplifier
PN2907 / MMBT2907 — PNP General-Purpose Transistor

January 2014

PN2907 / MMBT2907 PNP General-Purpose Transistor
Description
This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63.

PN2907

EBC

TO-92

MMBT2907

C

SOT-23
Mark:2B

E B

Ordering Information
Part Number PN2907BU
MMBT2907_D87Z

Top Mark PN2907
2B

Package TO-92 3L SOT-23 3L

Packing Method Bulk
Tape and Reel

© 1997 Fairchild Semiconductor Corporation PN2907 / MMBT2907 Rev. 1.1.0

1

www.fairchildsemi.com

PN2907 / MMBT2907 — PNP General-Purpose Transistor

Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute m...



MMBT2907
January 2014
PN2907 / MMBT2907
PNP General-Purpose Transistor
Description
This device is designed for use with general-purpose
amplifiers and switches requiring collector currents to
500 mA. Sourced from process 63.
PN2907
EBC
TO-92
MMBT2907
C
SOT-23
Mark:2B
E
B
Ordering Information
Part Number
PN2907BU
MMBT2907_D87Z
Top Mark
PN2907
2B
Package
TO-92 3L
SOT-23 3L
Packing Method
Bulk
Tape and Reel
© 1997 Fairchild Semiconductor Corporation
PN2907 / MMBT2907 Rev. 1.1.0
1
www.fairchildsemi.com

MMBT2907
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
TJ, TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
-40
-60
-5.0
-800
-55 to +150
Unit
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RθJC
RθJA
Total Device Dissipation
Derate Above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
PN2907(3)
MMBT2907(4)
625 350
5.0 2.8
83.3
200 357
Unit
mW
mW/°C
°C/W
°C/W
Notes:
3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6. inch x 1.6 inch x 0.06 inch.
© 1997 Fairchild Semiconductor Corporation
PN2907 / MMBT2907 Rev. 1.1.0
2
www.fairchildsemi.com




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