Complementary Transistors. NTE210 Datasheet

NTE210 Transistors. Datasheet pdf. Equivalent

Part NTE210
Description Silicon Complementary Transistors
Feature NTE210 (NPN) & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Descri.
Manufacture NTE
Datasheet
Download NTE210 Datasheet




NTE210
NTE210 (NPN) & NTE211 (PNP)
Silicon Complementary Transistors
General Purpose Output & Driver
Description:
The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack-
age designed for general purpose, medium voltage, medium power amplifier and driver applications
such as series, shunt and switching regulators, and low and high frequency inverters and converters.
Features:
D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TA = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260°C
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W
Note 1. Pulse Test: Pulse Width 300µs.
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0
Collector Cutoff Current
ICES VCE = 90V
Emitter Cutoff Current
IEBO VEB = 5V
Min Typ Max Unit
75 – – V
– – 100 nA
– – 100 nA



NTE210
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 3)
DC Current Gain
hFE IC = 100mA, VCE = 2V
IC = 1A, VCE = 2V
120 360
10
CollectorEmitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA
– – 1.0 V
BaseEmitter Saturation Voltage
Dynamic Characteristics
VBE(sat) IC = 500mA, IB = 50mA
– – 1.5 V
CurrentGain Bandwidth Product
CollectorBase Capacitance
NTE210
fT IC = 20mA, VCE = 10V, f = 20MHz 75
Ccb
VCB = 20V, IE = 0, f = 1MHz
375 MHz
12 pF
NTE211
– – 18 pF
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.380 (9.56)
.180 (4.57)
C .132 (3.35) Dia
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.400
(10.16)
Min
E BC
.100 (2.54)
.100 (2.54)







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