NPN Transistor. NTE215 Datasheet

NTE215 Transistor. Datasheet pdf. Equivalent

Part NTE215
Description Silicon NPN Transistor
Feature NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington.
Manufacture NTE
Datasheet
Download NTE215 Datasheet




NTE215
NTE215
Silicon NPN Transistor
Darlington Driver
Description:
The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in-
clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
Features:
D High DC Current Gain
D Large Current Capacity and Wide ASO
D Low Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Turn–On Time
Storage Time
Fall Time
ICBO VCB = 80V, IE = 0
IEBO VEB = 5V, IC = 0
hFE VCE = 3V, IC = 4A
fT VCE = 5V, IC = 4A
VCE(sat) IC = 4A, IB = 8mA
VBE(sat) IC = 4A, IB = 8mA
V(BR)CBO IC = 5mA, IE = 0
V(BR)CEO IC = 50mA, RBE =
ton VCC = 50V, VBE = –5V,
tstg
500IB1 = –500IB2 = IC = 4A,
PW = 50µs, Duty Cycle 1%
tf
Min Typ Max Unit
– – 0.1 mA
– – 3.0 mA
1500 4000 –
– 20 – MHz
– 0.9 1.5 V
– – 2.0 V
110 – – V
100 – – V
– 0.6 – µs
– 4.8 – µs
– 1.6 – µs



NTE215
Schematic Diagram
C
B
E
.190 (4.82)
.787
(20.0)
.615 (15.62)
C
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B CE
.215 (5.47)







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