MOSFET. NTE221 Datasheet

NTE221 MOSFET. Datasheet pdf. Equivalent

Part NTE221
Description MOSFET
Feature NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications Description: The NTE221 is an N.
Manufacture NTE
Datasheet
Download NTE221 Datasheet



NTE221
NTE221
MOSFET
Dual Gate, N–Channel for
VHF TV Receivers Applications
Description:
The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes
MOS construction. This device has characteristics which makes it highly desirable for use in RF–am-
plifier applications.
Features:
D Extremely Low Feedback Capacitance
D High Power Gain
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–to–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +20V
Gate 1–to–Source Voltage, VG1S
Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1V to –8V
Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V to –8V
Gate 2–to–Source Voltage, VG2S
Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to 40% of VDS
Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to +20V
Drain–to–Gate Voltage, VDG1 or VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Pulsed Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Transistor Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C
Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Lead Temperature (During Soldering, 1/32” from seating surface, 10sec max), TL . . . . . . . . +265°C
Note 1. Pulse test: Pulse Width 20ms, Duty Cycle 15%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate 1–to–Source Cutoff Voltage
Gate 2–to–Source Cutoff Voltage
Gate 1 Leakage Current
VG1S(off)
VG2S(off)
IG1SS
VDS = 15V, VG2S = 4V, ID = 200mA
VDS = 15V, VG1S = 0, ID = 200mA
VG1S = 20V, VG2S = 0, VDS = 0
Gate 2 Leakage Current
IG2SS VG2S = 20V, VG1S = 0, VDS = 0
Min
Typ Max
–2 –
–2 –
–1
–1
Unit
V
V
nA
nA



NTE221
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain Current
Forward Transconductance
IDSS
gfs
VDS = 13V, VG1S = 0, VG2S = 4V
VDS = 13V, ID = 10mA, VG2S = 4V,
f = 1kHz
18 mA
1000 µmhos
Performance Characteristics: (TA = +25°C, f = 200MHz, Note 2 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
SmallSignal, Short Circuit Reverse
Transfer Capacitance
Crss (DraintoGate 1) at f = 1MHz 0.02 0.03 pF
Output Capacitance
Input Capacitance
Input Resistance
Output Resistance
Magnitude of Forward Transconductance
Phase Angle of Forward Transadmittance
Coss
Ciss
riss
ross
|Yfs|
2.2
pF
5.5
pF
1.2
k
2.8
k
11000 µmhos
– –46 deg
Maximum Available Power Gain
MAG
20 dB
Maximum Usable Power Gain
(Unneutralized)
MUGu Note 3
20 dB
Power Gain
Noise Figure
GPS
NF
17.5
––5
dB
dB
Note 2. VG1S is adjusted for ID = 10mA, Gate 2 at AC ground potential, VDS = 13V, VG2S = 4V.
Note 3. Limited by practical design considerations.
.190
(4.82)
.500
(12.7)
Min
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.018 (0.45) Dia
Drain
Gate 2
Gate 1
45°
Source/Case
.040 (1.02)







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