Voltage Amp. NTE227 Datasheet

NTE227 Amp. Datasheet pdf. Equivalent

Part NTE227
Description Silicon NPN Transistor High Voltage Amp
Feature NTE227 Silicon NPN Transistor High Voltage Amp, Video Output Absolute Maximum Ratings: Collector–Bas.
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Datasheet
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NTE227
NTE227
Silicon NPN Transistor
High Voltage Amp, Video Output
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation (TA = +25°C), PDmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW
Power Dissipation (TCOLLECTOR LEAD = +25°C), PDmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Maximum Operating Junction Temperature, TJmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Thermal Resistance, Junction–to–Case (TCOLLECTOR LEAD = +25°C), RthJC . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Ambient (TA = +25°C), RthJA . . . . . . . . . . . . . . . . . . . . . . 147°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transition Frequency
Base–Emitter Saturation Voltage
Capacitance
ICBO VCB = 260V
IEBO VEB = 6V
hFE IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
V(BR)CEO IC = 1mA
V(BR)CBO IC = 100µA
V(BR)EBO IE = 10µA
VCE(sat) IC = 20mA, IB = 2mA
VBE(sat) IC = 20mA, IB = 2mA
fT IC = 10mA
VBE(sat) IC = 10mA
Cib
Min Typ Max Unit
– – 100 nA
– – 100 nA
25 – –
40 90 200
300 – – V
300 – – V
6––V
– 0.25 1.0 V
– 0.74 1.0 V
50 – 200 MHz
– – 0.76 V
– – 70 pF



NTE227
.200 (5.08)
.180 (4.57)
.100 (2.54)
EBC
.180
(4.57)
.594
(15.09)
.018 (0.46)
.050 (1.27)
.015 (0.38)
3.050 (1.27)
.050 (1.27)
.140
(3.55)
.090 (2.28) R







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