NPN Transistor. NTE229 Datasheet

NTE229 Transistor. Datasheet pdf. Equivalent

Part NTE229
Description Silicon NPN Transistor
Feature NTE229 Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp Absolute Maximum Ratings: Collector–Emit.
Manufacture NTE
Datasheet
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NTE229
NTE229
Silicon NPN Transistor
VHF Oscillator, Mixer, IF Amp
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 425mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +230°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector–Emitter Sustaining Voltage
Base–Emitter ON Voltage
Current Gain–Bandwidth Product
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCEO(sus)
VBE(on)
fT
IC = 100µA, IE = 0
IE = 100µA, IC = 0
VCB = 30V, IE = 0
IC = 5mA, VCE = 10V
IC = 1mA, IB = 0
IC = 5mA, VCE = 10V
IC = 5mA, VCE = 10V,
f = 100MHz
Power Gain
Gpe VCC = 12V, VBB = 2.5V,
f = 45MHz
Collector–Base Capacitance
Noise Figure
Ccb IE = 0, VCB = 15V, f = 1MHz
NF VCC = 12V, f = 45MHz
Min Typ Max Unit
30 – – V
3–– V
– – 200 nA
30 – 225
30 – – V
– – 0.85 V
500 – – MHz
28 – – dB
– – 0.4 pF
– – 6 dB



NTE229
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
BEC
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max







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