Controlled Rectifier. NTE231 Datasheet

NTE231 Rectifier. Datasheet pdf. Equivalent

Part NTE231
Description Silicon Controlled Rectifier
Feature NTE231 Silicon Controlled Rectifier (SCR) TV Deflection Circuit Features: D CTV 110° – CRT Horizonta.
Manufacture NTE
Datasheet
Download NTE231 Datasheet




NTE231
NTE231
Silicon Controlled Rectifier (SCR)
TV Deflection Circuit
Features:
D CTV 110° – CRT Horizontal Deflection
D Comutater Switch
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Non–Repetitive Peak Forward Voltage (TJ = +100°C), VDSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
RMS On–State Current (Note 1), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Average On–State Current (Note 1), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A
Surge Current (Note 1), ITSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Critical Rate–of–Rise of On–State Current, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs
Peak Gate Power Dissipation (Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Minimum Peak Reverse Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W
Note 1. Single Phase, Half Sine Wave at 50Hz, TC = +60°C
Note 2. 10µs duration
Electrical Characteristics:
Parameter
Peak Off–State Current
Peak On–State Voltage
DC Gate Trigger Current
Symbol
Test Conditions
IDRM
VTM
IGT
VDRM = 700V, TJ = +100°C
ITM = 20A, TC = +25°C
TC = –40°C VD = 6V, RL = 10
TC = +25°C
Min Typ Max Unit
– – 1.5 mA
– – 3.0 V
– – 75 mA
– – 45 mA



NTE231
Electrical Characteristics (Cont’d):
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Gate NonTrigger Voltage
DC Gate NonTrigger Current
Holding Current
TurnOff Time
Critical Exponential
RateofRise of Forward
Blocking State Voltage
VGD VD = 700V, TC = +100°C
0.2 – – V
IGD VD = 700V, TC = +100°C
1.0 – – mA
IH VD = 6V, RL = 10
– – 100 mA
tq ITM = 8A, di/dt = 20A/µs,
– – 4.5 µs
VD = 610V, dv/dt = 700V/µs,
f = 15.7kHz, TC = +70°C, VG = 25V
dv/dt VDRM = 500V, VG = 2.5V,
TC = +70°C, RG = 100
700 – – V/µs
.062 (1.57)
.485 (12.3)
Dia
.295 (7.5)
.031 (0.78) Dia
.960 (24.3)
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.145 (3.7) R Max
.360
(9.14)
Min
Gate
.200
(5.08)
Anode/Case
Cathode







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