PNP Transistor. NTE232 Datasheet

NTE232 Transistor. Datasheet pdf. Equivalent

Part NTE232
Description Silicon PNP Transistor
Feature NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp Description: The NTE232 is a silicon, pla.
Manufacture NTE
Datasheet
Download NTE232 Datasheet

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NTE232
NTE232
Silicon PNP Transistor
Darlington Amplifier, Preamp
Description:
The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type pack-
age designed for preamplifier input applications where high impedance is a requirement.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Total Power Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +230°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Forward Current Transfer Ratio
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
V(BR)CES
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
IC = 100µA, IB = 0
VCB = 30V, IE = 0
VBE = 8V, IC = 0
IC = 10mA, VCE = 5V
IC = 100mA, VCE = 5V
IC = 100mA, IB = 0.1mA
IC = 100mA, VCE = 5V, Note 1
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
30 – –
– – 100
– – 100
50k – –
20k – –
– 0.9 1.5
– 1.45 2.00
V
nA
nA
V
V



NTE232
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Current GainBandwidth Product
fT IC = 30mA, VCE = 10V, f =
50MHz
100 125 MHz
Output Capacitance
Noise Figure
Ccb ICB = 10mA, IE = 0, f = 100MHz 2.5 pF
NF IC = 1mA, VCE = 5V, RS = 100k, 2 dB
f = 1kHz
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
EBC
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max





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