PNP Transistor. NTE234 Datasheet

NTE234 Transistor. Datasheet pdf. Equivalent

Part NTE234
Description Silicon PNP Transistor
Feature NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier Description: The NTE234 is a silicon PN.
Manufacture NTE
Datasheet
Download NTE234 Datasheet




NTE234
NTE234
Silicon PNP Transistor
Low Noise, High Gain Amplifier
Description:
The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Features:
D Low Noise
D High DC Current Gain
D High Breakdown Voltage
D Low Pulse Noise
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Steady State Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Breakdown Voltage
Collector–to–Emitter
ICBO VCB = 120V, IE = 0
IEBO VEB = 5V, IC = 0
V(BR)CEO IC = 1mA, IB = 0
DC Current Gain
hFE VCE = 6V, IC = 2mA
Min Typ Max Unit
– – 100 nA
– – 100 nA
120 – – V
350 – 700



NTE234
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Saturation Voltage
CollectortoEmitter
VCE(sat) IC = 10mA, IB = 1mA
– – 0.3 V
BasetoEmitter Voltage
VBE VCE = 6V, IC = 2mA
0.65 V
Transition Frequency
Collector Output Capacitance
Noise Figure
fT VCE = 6V, IC = 1mA
Cob VCB = 10V, IE = 0, f = 1MHz
NF VCE = 6V, IC = 100µA,
f = 10Hz, Rg = 10k
VCE = 6V, IC = 100µA,
f = 1Hz, Rg = 10k
VCE = 6V, IC = 100µA,
f = 1Hz, Rg = 100k
100
4
––
MHz
pF
6 dB
–– 2
3
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
ECB
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max







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