Complementary Transistors. NTE241 Datasheet

NTE241 Transistors. Datasheet pdf. Equivalent

Part NTE241
Description Silicon Complementary Transistors
Feature NTE241 (NPN) & NTE242 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Descript.
Manufacture NTE
Datasheet
Download NTE241 Datasheet




NTE241
NTE241 (NPN) & NTE242 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Description:
The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package
designed for use in power amplifier and switching circuits.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
IC = 100mA, IB = 0, Note 1
VCE = 80V, IB = 0
VCE = 80V, VEB(off) = 1.5V
VCE = 80V, VEB(off) = 1.5V, TC = +125°C
VCB = 80V, IE = 0
VBE = 5V, IC = 0
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
80 – – V
– – 1.0 mA
– – 0.1 mA
– – 2.0 mA
– – 0.1 mA
– – 1.0 mA



NTE241
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
IC = 1.5A, VCE = 2V
IC = 4.0A, VCE = 2V
IC = 1.5A, IB = 150mA
IC = 4.0A, IB = 1A
IC = 1.5A, VCE = 2V
20 80
7––
– – 0.6 V
– – 1.4 V
– – 1.2 V
SmallSignal Current Gain
CurrentGain Bandwidth Product
hfe IC = 100mA, VCE = 2V, f = 1kHz
fT IC = 1A, VCE = 4V, f = 1MHz
25
2.5
MHz
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab







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