Complementary Transistors. NTE251 Datasheet

NTE251 Transistors. Datasheet pdf. Equivalent

Part NTE251
Description Silicon Complementary Transistors
Feature NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description.
Manufacture NTE
Datasheet
Download NTE251 Datasheet




NTE251
NTE251 (NPN) & NTE252 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain @ IC = 10A:
hFE = 2400 Typ (NTE251)
hFE = 4000 Typ (NTE252)
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.915W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09°C/W



NTE251
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics
CollectorEmitter SustainingVoltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
VCEO(sus) IC = 100mA, IB = 0
ICEO VCE = 50V, IE = 0
ICEX VCE = 100V, VBE(off) = 1.5V
VCE = 100V, VBE(off) = 1.5V,
TA = +150°C
IEBO VBE = 5V, IC = 0
100
– – 1.0
– – 0.5
– – 5.0
– – 2.0
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VBE(on)
VCE = 3V, IC = 10A
VCE = 3V, IC = 20A
IC = 10A, IB = 40mA
IC = 20A, IB = 200mA
IC = 20A, IB = 200mA
VCE = 3V, IC = 10A
750 18000
100
– – 2.0
– – 3.0
– – 4.0
– – 2.8
SmallSignal Current Gain
hfe VCE = 3V, IC = 10A, f = 1kHz
Magnitude of Common Emitter
SmallSignal ShortCircuit
|hfe| VCE = 3V, IC = 10A, f = 1MHz
Forward Current Transfer Ratio
300
4.0
Output Capacitance
NTE251
NTE252
Cob VCB = 10V, IE = 0, f = 0.1MHz
– – 400
– – 600
Unit
V
mA
mA
mA
mA
V
V
V
V
MHz
pF
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Schematic Diagram
CC
BB
NPN
E
PNP
E







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