Complementary Transistors. NTE263 Datasheet

NTE263 Transistors. Datasheet pdf. Equivalent

Part NTE263
Description Silicon Complementary Transistors
Feature NTE263 (NPN) & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description.
Manufacture NTE
Datasheet
Download NTE263 Datasheet




NTE263
NTE263 (NPN) & NTE264 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain:
hFE = 2500 Typ (NTE263)
= 3500 Typ (NTE264)
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 5A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/°C
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C
Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W



NTE263
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
VCEO(sus) IC = 200mA, IB = 0, Note 1
ICEO VCE = 100V, IB = 0
ICEX VCE = 100V, VEB(off) = 1.5V
VCE = 100V, VEB(off) = 1.5V, TC = +125°C
IEBO VBE = 5V, IC = 0
100
V
1.0 mA
300 µA
3 mA
5 mA
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
IC = 5A, VCE = 3V
IC = 10A, VCE = 3V
IC = 5A, IB = 0.01A
IC = 10A, IB = 0.1A
IC = 3A, VCE = 3V
IC = 10A, VCE = 3V
1000 20000
100
–– 2 V
–– 3 V
– – 2.8 V
– – 4.5 V
SmallSignal Current Gain
Output Capacitance
SmallSignal Current Gain
|hfe| IC = 1A, VCE = 5V, ftest = 1MHz
Cob VCB = 10V, IE = 0, f = 1MHz
hfe IC = 1A, VCE = 5V, f = 1kHz
20
1000
200 pF
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
NTE263
C
B
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
E
.500
(12.7)
Min
NTE264
C
B
E
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Max
Emitter
Collector/Tab







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