Power Amplifier. NTE266 Datasheet

NTE266 Amplifier. Datasheet pdf. Equivalent

Part NTE266
Description Silicon NPN Transistor Darlington Power Amplifier
Feature NTE266 Silicon NPN Transistor Darlington Power Amplifier Features: D Forward Current Transfer Ratio:.
Manufacture NTE
Datasheet
Download NTE266 Datasheet




NTE266
NTE266
Silicon NPN Transistor
Darlington Power Amplifier
Features:
D Forward Current Transfer Ratio: hFE = 40,000 Min
D Power Dissipation: 1.33W Free–Air @ TA = +50°C
D Hard Solder Mountdown
Applications:
D Driver, IC Driver
D Regulator
D Touch Switch
D Audio Output
D Relay Substitute
D Oscillator
D Servo–Amplifier
D Capacitor Multiplier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–to–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W
TA = +50°C With Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Thermal Resistance, Junction–to–Case (Note 1), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Operating Junction Temperature Range (Note 1), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature range (Note 1), Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case, 10sec Max), TL . . . . . . . . . . . . . . . . . +260°C
Note 1. Tab temperature is measured on center of tab, 1/16” from plastic body.



NTE266
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Forward Current Transfer Ratio
Collector Saturation Voltage
Base Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Input Impedance
Collector Capacitance
Gain Bandwidth Product
Delay Time and Rise Time
Storage Time
Fall Time
hFE IC = 200mA, VCE = 5V
40k – –
hfe IC = 20mA, VCE = 5V, f = 1kHz 20k
VCE(sat) IC = 500mA, IB = 0.5mA, Note 2
1.5 V
VBE(sat) IC = 500mA, IB = 0.5mA, Note 2
2.0 V
ICES VCE = 50V, TJ = +25°C
– – 0.5 µA
ICBO VCE = 50V, TJ = +150°C
– – 20 µA
IEBO VEB = 13V
– – 0.1 µA
hie IC = 20mA, VCE = 5V, f = 1kHz 50 500
Ccbo VCB = 10V, f = 1MHz
5 10 pF
fT VCE = 5V, IC = 20mA
75 MHz
td + tr IC = 1A, IB1 = 1mA
100 ns
ts IC = 1A, IB1 = IB2 = 1mA
350 ns
tf IC = 1A, IB1 = IB2 = 1mA
800 ns
Note 2. Pulsed measurement: Pulse Width = 300µs, Duty Cycle 2%.
.380 (9.56)
.180 (4.57)
C .132 (3.35) Dia
.500
C
(12.7)
1.200
.325
(9.52)
B
(30.48)
Ref
.070 (1.78) x 45°
.300 Chamf
E
(7.62)
.050 (1.27)
.400
(10.16)
Min
E BC
.100 (2.54)
.100 (2.54)







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