/ Switch. NTE274 Datasheet

NTE274 Switch. Datasheet pdf. Equivalent

Part NTE274
Description Silicon Complementary Transistors Darlington Power Amplifier / Switch
Feature NTE274 (NPN) & NTE275 (PNP) Silicon Complementary Transistors Darlington Power Amplifier, Switch Des.
Manufacture NTE
Datasheet
Download NTE274 Datasheet




NTE274
NTE274 (NPN) & NTE275 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier, Switch
Description:
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66
type case designed for general purpose amplifier, low–frequency switching and hammer driver
applications.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 2A
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.286W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 50mA, IB = 0
ICEO VCE = 40V, IB = 0
ICER VCE = 80V, VEB(off) = 1.5V
VCB = 80V, VEB(off) = 1.5V, TA = +150°C
IEBO VBE = 5V, IC = 0
Min Typ Max Unit
80 – – V
– – 0.5 mA
– – 0.5 mA
– – 5.0 mA
– – 2.0 mA



NTE274
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
ON Characteristics
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VBE(on)
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
IC = 2A, IB = 8mA
IC = 4A, IB = 40mA
IC = 4A, IB = 40mA
VCE = 3V, IC = 2A
750
100
Magnitude of Common Emitter
SmallSignal ShortCircuit
|hfe| IC = 1.5A, VCE = 3V, f = 1MHz
Forward Current Transfer Ratio
4.0
Output Capacitance
NTE274
NTE275
Cob
VCB = 10V, IE = 0, f = 0.1MHz
SmallSignal Current Gain
hfe IC = 1.5A, VCE = 3V, f = 1kHz
300
Typ Max Unit
18000
––
2.0 V
3.0 V
4.0 V
2.8 V
––
120 pF
200 pF
––
NTE274
C
B
.485 (12.3)
.295 (7.5)
Dia
.062 (1.57)
E
NTE275
.031 (0.78) Dia
.360 (9.14)
Min
.960 (24.3)
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
C
.200
(5.08)
.145 (3.7) R Max
B
Collector/Case
Emitter
E







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