/ Switch. NTE283 Datasheet

NTE283 Switch. Datasheet pdf. Equivalent

Part NTE283
Description Silicon NPN Transistor Horizontal Output / Switch
Feature NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN tra.
Manufacture NTE
Datasheet
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NTE283
NTE283
Silicon NPN Transistor
Horizontal Output, Switch
Description:
The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high–
speed, power switching in inductive circuits where fall time is critical. Typical applications include
switching regulators, PWM inverters, solenoid and relay drivers.
Absolute Maximum Ratings:
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (tp 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Power Dissipation (TC +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Base Voltage
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Current Gain–Bandwidth Product
Second Breakdown Collector Current
ICES
IEBO
VCBO
VCEO(su
s)
VCE(sat)
VBE(sat)
hFE
fT
IS/b
VCEV = 800V, VBE = 0
VEB = 8V, IC = 0
IC = 1mA, IE = 0
IC = 100mA, IB = 0, Note 1
IC = 8A, IB = 2.5A, Note 1
IC = 8A, IB = 2.5A, Note 1
VCE = 10V, IC = 2.5A, Note 1
VCE = 10V, IC = 500mA
VCE = 25V, Note 2
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 1.5%.
Note 2. Pulsed: 1sec, non–repetitive pulse.
Min Typ Max Unit
– – 1 mA
– – 1 mA
800 – – V
325 – – V
– – 3.3 V
– – 2.2 V
15 –
– 10 – MHz
4––A



NTE283
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
TurnOn Time
Storage Time
Fall Time
ton VCC = 250V, IC = 5A, IB1 = 1A
ts VCC = 250V, IC = 5A,
tf IB1 = IB2 = 1A
0.2
1.7
0.3
µs
µs
µs
Fall Time
tf VCC = 40V, IC = 8A,
IB1 = IB2 = 2.5A
– – 1.0 µs
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case







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