Purpose Amplifier. NTE287 Datasheet

NTE287 Amplifier. Datasheet pdf. Equivalent

Part NTE287
Description Silicon Complementary Transistors High Voltage / General Purpose Amplifier
Feature NTE287 (NPN) & NTE288 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifie.
Manufacture NTE
Datasheet
Download NTE287 Datasheet




NTE287
NTE287 (NPN) & NTE288 (PNP)
Silicon Complementary Transistors
High Voltage, General Purpose Amplifier
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, VCBE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO
NTE287 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
NTE288 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation @ TA = +25°C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Total Device Dissipation @ TC = +25°C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/mW
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/mW
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
NTE287
NTE288
Collector Cutoff Current
NTE287
NTE288
V(BR)CEO IC = 1mA, IB = 0, Note 1
V(BR)CBO IC = 100µA, IE = 0
V(BR)EBO
IE = 100µA, IC = 0
ICBO
VCB = 200V, IE = 0
Emitter Cutoff Current
NTE287
NTE288
IEBO
VEB = 6V, IC = 0
VEB = 3V, IC = 0
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
300 – – V
300 – – V
6––V
5––V
– – 0.1 µA
– – 0.25 µA
– – 0.1 µA
– – 0.1 µA



NTE287
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
NTE287 & NTE288
hFE
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
25
40
NTE287
NTE288
IC = 30mA, VCE = 10V
40
25
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Small–Signal Characteristics
VCE(sat) IC = 20mA, IB = 2mA
VBE(sat) IC = 20mA, IB = 2mA
– – 0.5 V
– – 0.9 V
Current Gain Bandwidth Product
CollectorBase Capacitance
NTE287
fT IC = 10mA, VCE = 20V, f = 100MHz 50
Ccb
VCB = 20V, IE = 0, f = 1MHz
––
MHz
3 pF
NTE288
– – 6 pF
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
EBC
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max







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