/ Switch. NTE289 Datasheet

NTE289 Switch. Datasheet pdf. Equivalent

Part NTE289
Description Silicon Complementary Transistors Audio Power Amplifier / Switch
Feature NTE289 (NPN) & NTE290 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Applica.
Manufacture NTE
Datasheet
Download NTE289 Datasheet




NTE289
NTE289 (NPN) & NTE290 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Applications:
D 1W Audio Power Amplifier Applications
D Switching Applications
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Current–Gain Bandwidth Product
Output Capacitance
Switching Time
Turn–On
Storage
Fall
V(BR)CEO IC = 10mA, IB = 0
ICBO VCB = 35V, IE = 0
IEBO VEB = 5V, IC = 0
hFE (1) VCE = 2V, IC = 50mA, Note 2
hFE (2) VCE = 2V, IC = 500mA, Note 2
VCE(sat) IC = 500mA, IB = 20mA, Note 2
VBE VCE = 2V, IC = 500mA, Note 2
fT VCE = 10V, IC = 10mA
Cob VCB = 10V, IE = 0, f = 1MHz
ton VCC = 10V, VBB = 3V,
tstg Duty Cycle 2%
tf
30 – – V
– – 0.1 µA
– – 0.1 µA
120 – 240
35 –
– – 0.8 V
– – 1.1 V
– 140 – MHz
– 22 30 pF
– 50 –
– 400 –
– 40 –
ns
ns
ns
Note 1. NTE289MP is a matched pair of NTE289 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.



NTE289
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
ECB
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165 (4.2)
Max
.105 (2.67) Max
.122 (3.09) Max
.200 (5.08) Max
ECB
.255 (6.48)
Max
.492 (12.5
Min
.017 (0.45) Dia.
.027 (0.68) Dia.
.059 (1.5)
.059 (1.5)







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