/ Driver. NTE295 Datasheet

NTE295 Driver. Datasheet pdf. Equivalent

Part NTE295
Description Silicon NPN Transistor RF Power Output / Driver
Feature NTE295 Silicon NPN Transistor RF Power Output, Driver Absolute Maximum Ratings: (TA = +25°C unless o.
Manufacture NTE
Datasheet
Download NTE295 Datasheet



NTE295
NTE295
Silicon NPN Transistor
RF Power Output, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage (RBE = 150), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
DC Current Gain
Current Gain Bandwidth Product
ICBO VCB = 40V, IE = 0
IEBO VEB = 4V, IC = 0
V(BR)CBO IC = 10µA, IE = 0
V(BR)CER IC = 1mA, RBE = 150
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 10µA, IC = 0
hFE VCE = 5V, IC = 500mA
fT VCE = 10V, IC = 50mA
– – 1.0
– – 1.0
75 –
75 –
45 –
5––
60 – 320
180 250 –
µA
µA
V
V
V
V
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Output Capacitance
Output Power
Collector Efficiency
VCE(sat) IC = 500mA, IB = 50mA
– 0.2 0.6 V
VBE(sat) IC = 500mA, IB = 50mA
– 0.9 1.2 V
Cob VCB = 10V, f = 1MHz
– 15 25 pF
PO VCC = 12V, f = 27MHz, Pi = 35mW 1.0 1.8 –
W
η 60 – – %



NTE295
.450
(11.4)
Max
.330 (8.38) Max
.175
(4.45)
Max
.655
(16.6)
Max
.118
(3.0)
Dia
ECB
.030 (.762) Dia
.130 (3.3)
Max
.090 (2.28)







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