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NTE3123

Phototransistor

Description

NTE3123 Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Compact D Intermediate Acceptance: ∆q = ±40° Typ D Visible Light Cut–Off Applications: D VCRs D Optoelectronic Switches Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . ....

NTE

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