field-effect transistors. PN4391 Datasheet

PN4391 transistors. Datasheet pdf. Equivalent

Part PN4391
Description N-channel silicon field-effect transistors
Feature DISCRETE SEMICONDUCTORS DATA SHEET PN4391 to 4393 N-channel silicon field-effect transistors Produ.
Manufacture Philips
Datasheet
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PN4391
DISCRETE SEMICONDUCTORS
DATA SHEET
PN4391 to 4393
N-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
April 1989



PN4391
Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PN4391 to 4393
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
PINNING
1 = gate
2 = source
3 = drain
Note: Drain and source are
interchangeable.
QUICK REFERENCE DATA
Drain-source voltage
Total power dissipation
up to Tamb = 25 °C
Drain current
VDS = 20 V; VGS = 0
Gate-source cut-off voltage
VDS = 20 V; ID = 1 nA
Drain-source on-resistance
ID = 1 mA; VGS = 0
handbook, half1pa2ge
3
g
MAM042
d
s
Fig.1 Simplified outline and symbol, TO-92.
± VDS
Ptot
max.
max.
IDSS
VGS off
min.
min.
max.
RDS on
max.
40 V
360 mW
PN4391 PN4392 PN4393
50 25
5 mA
4 2 0.5 V
10 5 3 V
30 60 100
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Forward gate current (DC)
Total power dissipation
± VDS
VGSO
VGDO
IG
up to Tamb = 25 °C
Storage temperature range
Junction temperature
Ptot
Tstg
Tj
max.
max.
max.
max.
max.
max.
40
40
40
50
360
65 to+150
150
V
V
V
mA
mW
°C
°C
April 1989
2





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