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Barrier Rectifier. NTE573 Datasheet

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Barrier Rectifier. NTE573 Datasheet
















NTE573 Rectifier. Datasheet pdf. Equivalent













Part

NTE573

Description

Schottky Barrier Rectifier



Feature


NTE573 Schottky Barrier Rectifier Descri ption: The NTE573 is an axial lead meta l–to–silicon power diode using the Schottky Barrier principle. State– of –the–art geometry features epitaxia l construction with oxide passivation a nd metal overlap contact. This device i s ideally suited for use in low–volta ge, high–frequency inverters, as free wheeling diodes, and polarity p.
Manufacture

NTE Electronics

Datasheet
Download NTE573 Datasheet


NTE Electronics NTE573

NTE573; rotection diodes. Features: D Low Forwar d Voltage D Low Power Loss D High Surge Capacity D Low Stored Charge Majority Carrier Conduction D High Efficiency D High Switching Capability Absolute Maxi mum Ratings: Peak Repetitive Reverse Vo ltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Working Peak Reverse Volt.


NTE Electronics NTE573

age, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V DC Block ing Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V RMS Reverse Volt age, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE573

. . . . . . . . . . . . 42V Average For ward Rectified Current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Non–Repetitive Peak Surge Current, IFSM (Surge applied at rated l oad conditions half–wave, single phas e, 60Hz, TL = +70°C) . 250A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . ..





Part

NTE573

Description

Schottky Barrier Rectifier



Feature


NTE573 Schottky Barrier Rectifier Descri ption: The NTE573 is an axial lead meta l–to–silicon power diode using the Schottky Barrier principle. State– of –the–art geometry features epitaxia l construction with oxide passivation a nd metal overlap contact. This device i s ideally suited for use in low–volta ge, high–frequency inverters, as free wheeling diodes, and polarity p.
Manufacture

NTE Electronics

Datasheet
Download NTE573 Datasheet




 NTE573
NTE573, NTE5731, NTE5732
Schottky Barrier Rectifier
DO201AD Type Package
Features:
D Schottky Barrier Chip
D Guard Ring for Transient and ESD Protection
D Surge Overload Rating to 150A Peak
D Low power Loss, High Efficiency
D Ideally Suited for Use in High Frequency SMPS, Inverters, and as Free Wheeling Diodes
Maximum
phase, half
Ratings and
wave, 60Hz,
rEelseicsttirviceaolrCinhdaurcatcivteerliosatidc.s:Fo(rTAca=p+a2ci5tivCe
unless otherwise specified. Single
load, derate current by 20%.)
Peak
Repetitive Reverse Voltage,
NTE573 . . . . . . . . . . . . . . . .
.V.R. R. M. .
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60V
NTE5731 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5732 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Working Peak Reverse
NTE573 . . . . . . .
Voltage,
........
V. .R.W.M. .
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60V
NTE5731 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5732 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
DC
Blocking Voltage,
NTE573 . . . . .
.V.R.
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60V
NTE5731 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5732 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
RMS
Reverse Voltage,
NTE573 . . . . . . .
V. .R.(R. M. .S.)
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42V
NTE5731 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
NTE5732 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Average Forward Rectified Current (Note 1), IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
NonRepetitive Peak Forward Surge
(8.3ms Single half SineWave
CSuurpreernimt, pIFoSsMed
on
Rated
Load)
. . . . . . . . . . . . . . . . . . . . 150A
Forward Voltage
NTE573 .
.(I.F.
= 5A),
......
V. .F.M.
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0.7V
NTE5731 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.85V
NTE5732 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9V
Rev. 315




 NTE573
Maximum Ratings and Electrical Characteristics (Cont’d):
Single phase, half wave, 60Hz, resistive or inductive load. For
c(aTpAa=ci+ti2v5elCoaudn,ledsesraottehecurwrriesnetsbpye2ci0fi%ed.).
Peak
Reverse Current
TJ
= +25C
NTE573
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(At rated DC
............
Blocking
........
Voltage), IRM
............
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5mA
NTE5731 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5mA
NTE5732 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2mA
TJ
= +100C
NTE573 .
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50mA
NTE5731 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
NTE5732 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Typical Junction
NTE573 .
Capacitance (Note
.................
2),
...
C. .J.
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400pF
NTE5731 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 380pF
NTE5732 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120pF
Thermal Resistance, JunctiontoAmbient (Note 3), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 25C/W
Thermal Resistance, JunctiontoLead (Note 3), RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0C/W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Note 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
Note 2. Measured at 1.0MHz and applied reverse voltage of 4.0VDC.
Note 3. Vertical PCB mounting with 12.7mm lead length on 63.5mm x 63.5mm copper pad.
1.000
(25.4)
Min
.374
(9.5)
Max
.051 (1.3) Dia Max
Color Band Denotes Cathode
.208 (5.3)
Dia Max








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