DatasheetsPDF.com

Switch SBS. NTE6403 Datasheet

DatasheetsPDF.com

Switch SBS. NTE6403 Datasheet
















NTE6403 SBS. Datasheet pdf. Equivalent













Part

NTE6403

Description

Integrated Circuit Silicon Bilateral Switch (SBS)



Feature


NTE6403 Integrated Circuit Silicon Bilat eral Switch (SBS) Description: The NTE6 403 is a silicon planer, monolithic int egrated circuit having the electrical c haracteristics of a bilateral thyristor . This device is designed to switch at 8 volts with a 0.02%/°C temperature co efficient and excellently matched chara cteristics in both directions. A gate l ead is provided to .
Manufacture

NTE Electronics

Datasheet
Download NTE6403 Datasheet


NTE Electronics NTE6403

NTE6403; eliminate rate effect and to obtain trig gering at lower voltages. The NTE6403 i s specifically designed and characteriz ed for applications where stability of switching voltage over a wide temperatu re range and well matched bilateral cha racteristics are an asset. It is ideall y suited for half wave and full wave tr iggering in low voltage SCR and TRIAC p hase control circu.


NTE Electronics NTE6403

its. Absolute Maximum Ratings: (TA = +25 °C unless otherwise specified) Peak Re current Forward Current (PW = 10µs, Du ty Cycle = 1%, TA = +25°C) . . . . . . . . . . . . . . . 1A Peak Non–Recurr ent Forward Current (PW = 10µs, TA = + 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipatio n (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE6403

. . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW DC Forward Anode C urrent (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA D C Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Operating Junction Temperature Range.





Part

NTE6403

Description

Integrated Circuit Silicon Bilateral Switch (SBS)



Feature


NTE6403 Integrated Circuit Silicon Bilat eral Switch (SBS) Description: The NTE6 403 is a silicon planer, monolithic int egrated circuit having the electrical c haracteristics of a bilateral thyristor . This device is designed to switch at 8 volts with a 0.02%/°C temperature co efficient and excellently matched chara cteristics in both directions. A gate l ead is provided to .
Manufacture

NTE Electronics

Datasheet
Download NTE6403 Datasheet




 NTE6403
NTE6403
Integrated Circuit
Silicon Bilateral Switch (SBS)
Description:
The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of
a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coeffi-
cient and excellently matched characteristics in both directions. A gate lead is provided to eliminate
rate effect and to obtain triggering at lower voltages.
The NTE6403 is specifically designed and characterized for applications where stability of switching
voltage over a wide temperature range and well matched bilateral characteristics are an asset. It is
ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control cir-
cuits.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Peak Recurrent Forward Current (PW = 10µs, Duty Cycle = 1%, TA = +25°C) . . . . . . . . . . . . . . . 1A
Peak Non–Recurrent Forward Current (PW = 10µs, TA = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA
DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. Derate linearly to zero at +125°C.
Note 2. This rating applicable only on OFF state. Maximum gate current in conducting state limited
by maximum power rating.
Electrical Characteristics: (TA = +25°C, Note 3 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Switching Voltage
Switching Current
Absolute Switching Voltage Difference
Absolute Switching Current Difference
Holding Current
OFF State Current
Temperature Coefficient of Switching Voltage
ON State Forward Voltage Drop
Forward Gate Current to Trigger
VS
IS
|VS2 – VS1|
|IS2 – IS1|
IH
IB VF = 5V TA = +25°C
TA = +85°C
TC TA = –55° to +85°C
VF IF = 175mA
IGF VF = 5V, RL = 1k
7.5 – 9.0 V
– – 120 µA
– – 200 mV
– – 10 µA
– – .5 mA
– – 0.1 µA
– – 10.0 µA
±0.05 – %/°C
– – 1.7 V
– – 100 µA
Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply
in either direction of current flow.




 NTE6403
Electrical Characteristics (Cont’d): (TA = +25°C, Note 3 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Dynamic
Peak Pulse Amplitude
TurnOn Time
Vo
ton
3.5
– – 1.0
TurnOff Time
toff
– – 30.0
Unit
V
µs
µs
Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply
in either direction of current flow.
A2
G
A1
SBS CIRCUIT SYMBOL
.210
(5.33)
Max
.500
(12.7)
Min
.135 (3.45) Min
Seating
Plane
.021 (.445)
Dia Max
A1 G A2
.100 (2.54)
.050 (1.27)
.140 (3.55) Max
.245
(6.23)
Max
.190 (4.82) Min
.065
(1.65)
.500
(12.7)
Min
A1 G A2
.100 (2.54)
.018 (0.45) Dia Max
.105 (2.67) Max
.205 (5.2) Max
.165 (4.2) Max
.105 (2.67) Max
.200 (5.08) Max








Recommended third-party NTE6403 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)