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Diodes DIACS. NTE6408 Datasheet

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Diodes DIACS. NTE6408 Datasheet
















NTE6408 DIACS. Datasheet pdf. Equivalent













Part

NTE6408

Description

Bilateral Trigger Diodes (DIACS)



Feature


NTE6407, NTE6408, NTE6411, NTE6412 Bilat eral Trigger Diodes (DIACS) Description : The NTE6407 thru NTE6412 are bilatera l trigger DIACs offering a range of vol tage characteristics from 28V to 63V. T hese devices are triggered from a block ing–to–conduction state for either polarity of applied voltage whenever th e amplitude of applied voltage exceeds the breakover voltage .
Manufacture

NTE Electronics

Datasheet
Download NTE6408 Datasheet


NTE Electronics NTE6408

NTE6408; rating of the DIAC. Features: D Glass– Chip Passivation D DO35 Type Trigger Pa ckage D Wide Voltage Range Selection Ab solute Maximum Ratings: Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1 µF Device Dissipation (TA = –40° to +40°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE6408

. . . . . . . . . . . . . . 250mW Derat e Above +40°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/°C Operating Junction Temperat ure Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Storage Temperat ure Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE6408

. . . . . . . . . . . . . . . . . . – 40° to +125°C Thermal Resistance, Jun ction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278°C/W Thermal Resi stance, Junction–to–Lead (Note 1), RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W Lead Temperature (During Soldering, 1/16” (1.59mm) from case, 10sec max), TL.





Part

NTE6408

Description

Bilateral Trigger Diodes (DIACS)



Feature


NTE6407, NTE6408, NTE6411, NTE6412 Bilat eral Trigger Diodes (DIACS) Description : The NTE6407 thru NTE6412 are bilatera l trigger DIACs offering a range of vol tage characteristics from 28V to 63V. T hese devices are triggered from a block ing–to–conduction state for either polarity of applied voltage whenever th e amplitude of applied voltage exceeds the breakover voltage .
Manufacture

NTE Electronics

Datasheet
Download NTE6408 Datasheet




 NTE6408
NTE6407, NTE6408,
NTE6411, NTE6412
Bilateral Trigger Diodes (DIACS)
Description:
The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics
from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity
of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating
of the DIAC.
Features:
D Glass–Chip Passivation
D DO35 Type Trigger Package
D Wide Voltage Range Selection
Absolute Maximum Ratings:
Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1µF
Device Dissipation (TA = –40° to +40°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above +40°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/°C
Operating Junction Temperature Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278°C/W
Thermal Resistance, Junction–to–Lead (Note 1), RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Lead Temperature (During Soldering, 1/16” (1.59mm) from case, 10sec max), TL . . . . . . . . +230°C
Note 1. Based on maximum lead temperature of +85°C at 250mW.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Breakover Voltage (Forward and Reverse)
NTE6407
NTE6408
VBO
NTE6411
NTE6412
Breakover Voltage Symmetry
NTE6407, NTE6408
NTE6411
VBO Note 2
NTE6412
Note 2. VBO = [ |+VBO| – |–VBO| ].
Min Typ Max Unit
24 28 32
28 32 36
35 40 45
56 63 70
V
V
V
V
––2V
––3V
––4V




 NTE6408
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Breakback Voltage
NTE6407, NTE6408
NTE6411
VBB |V±|, at 10mA, Note 3
|V±|, Note 3
7––V
10 – – V
NTE6412
20 – – V
Peak Breakover Current
Peak Pulse Current
NTE6407, NTE6408, NTE6411
NTE6412
IBO At Breakover Voltage
ITRM For 10µs, 120PPs, TA +40°C
– – 25 µA
– – 2.0 A
– – 1.5 A
Note 3. Typical switching time is 900ns measured at IPK.
1.100 (27.9)
.210 (5.33)
Max
.030 (.726)
.107 (2.73)








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