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Unijunction Transistor. NTE6409 Datasheet

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Unijunction Transistor. NTE6409 Datasheet
















NTE6409 Transistor. Datasheet pdf. Equivalent













Part

NTE6409

Description

Unijunction Transistor



Feature


NTE6409 Unijunction Transistor Descripti on: The NTE6409 is designed for use in pulse and timing circuits, sensing circ uits and thyristor trigger circuits. Fe atures: D Low Peak Point Current: 2µA Max D Low Emitter Reverse Current: 200n A Max D Passivated Surface for Reliabil ity & Uniformity Absolute Maximum Ratin gs: (TA = +25°C, unless otherwise spec ified) Power Dissipa.
Manufacture

NTE Electronics

Datasheet
Download NTE6409 Datasheet


NTE Electronics NTE6409

NTE6409; tion (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW RMS Emitter Current, IE(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak P ulse Emitter Current (Note 2), iE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


NTE Electronics NTE6409

. . . . . . . . . . . . . . . . . 2A Emi tter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Interbase Voltage , VB2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Operating Junction Tempera ture Range, TJ . ..


NTE Electronics NTE6409

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125 C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Note 1. Derate 3mW /°C increase in ambient temperature. T he total power dissipation (available p ower to Emitter and Base–Two) must be limited by the external circ.





Part

NTE6409

Description

Unijunction Transistor



Feature


NTE6409 Unijunction Transistor Descripti on: The NTE6409 is designed for use in pulse and timing circuits, sensing circ uits and thyristor trigger circuits. Fe atures: D Low Peak Point Current: 2µA Max D Low Emitter Reverse Current: 200n A Max D Passivated Surface for Reliabil ity & Uniformity Absolute Maximum Ratin gs: (TA = +25°C, unless otherwise spec ified) Power Dissipa.
Manufacture

NTE Electronics

Datasheet
Download NTE6409 Datasheet




 NTE6409
NTE6409
Unijunction Transistor
Description:
The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D Low Peak Point Current: 2µA Max
D Low Emitter Reverse Current: 200nA Max
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
RMS Emitter Current, IE(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Pulse Emitter Current (Note 2), iE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage, VB2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. Derate 3mW/°C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base–Two) must be limited by the external circuitry.
Note 2. Capacitor discharge: 10µF or less, 30V or less




 NTE6409
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Intrinsic Standoff Ratio
Interbase Resistance
Interbase Resistance
Temperature Coefficient
η
rBB
αrBB
VB2B1 = 10V, Note 3
0.68 0.82
VB2B1 = 3V, IE = 0
4.7 7.0 9.1 k
VB2B1 = 3V, IE = 0, TA = 55° to +125°C 0.1 0.9 %/°C
Emitter Saturation Voltage VEB1(sat) VB2B1 = 10V, IE = 50mA, Note 4
Modulated Interbase Current IB2(mod) VB2B1 = 10V, IE = 50mA
Emitter Reverse Current
IEB2O VB2E = 30V, IB1 = 0
Peak Point Emitter Current
IP VB2B1 = 25V
Valley Point Current
IV VB2B1 = 20V, RB2 = 100, Note 4
BaseOne Peak Pulse
Voltage
VOB1
3.5 V
15 mA
0.005 0.2 µA
1 2 µA
8 10 18 mA
67V
Note 3. Intrinsic Standoff Ratio, η, is defined by the equation:
η=
VP VF
VB2B1
Where: VP = Peak Point Emitter Voltage
VB2B1 = Interbase Voltage
VF = Emitter to BaseOne Junction Diode Drop ([ 0.45V @ 10µA)
Note 4. Use pulse techniques: PW [ 300µs, Duty Cycle 2% to avoid internal heating due to inter-
base modulation which may result in erroneous readings.
.210 (5.33)
Max
.500
(12.7)
Min
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.030 (.762) Max
Emitter
.018 (0.45)
Base 1
45°
Base 2/Case
.041 (1.05)








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