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Diodes SIDAC. NTE6419 Datasheet

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Diodes SIDAC. NTE6419 Datasheet
















NTE6419 SIDAC. Datasheet pdf. Equivalent













Part

NTE6419

Description

Bidirectional Thyristor Diodes (SIDAC)



Feature


NTE6415 thru NTE6419 Bidirectional Thyri stor Diodes (SIDAC) Description: The NT E6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered sw itches with greater power handling capa bilities than standard DIACs. Upon appl ication of a voltage exceeding the SIDA C breakover voltage point, the SIDAC sw itches on through a negative resistance region to a low o.
Manufacture

NTE Electronics

Datasheet
Download NTE6419 Datasheet


NTE Electronics NTE6419

NTE6419; n–state voltage. Conduction will conti nue until the current is interrupted or drops below the minimum holding curren t of the device. Features: D Especially Effective in AC Circuits D Switching F unction Directly with the AC Power Line D Applicable for Various Pulse Generat ors Applications: D High Voltage Lamp I gnitors D Natural Gas Ignitors D Gas Oi l Ignitors D High Vo.


NTE Electronics NTE6419

ltage Power Supplies D D D D Xenon Igni tors Overvoltage Protection Pulse gener ators Fluorescent Lighting Ignitors Ab solute Maximum Ratings: Peak Off Voltag e, VDRM NTE6415, NTE6416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V NTE6417, NT E6418, NTE6419 . . . . . . . . . . . . . . . . . . . . . .


NTE Electronics NTE6419

. . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Effective Current (TA = +40°C, 50Hz, Sine Wave, Conducting Angle = 180°), IT . . . . . . . . . . . . . . 1A Surge Current (50Hz, Non–R epeated 1 Cycle Sine wave, Peak Value), ITSM . . . . . . . . . . . . . . . 13A Peak Current (TA = +40°C, Pulse Width = 10µs, f = 1kHz), ITRM . . . . . . . . . . . . . . . . . . ..





Part

NTE6419

Description

Bidirectional Thyristor Diodes (SIDAC)



Feature


NTE6415 thru NTE6419 Bidirectional Thyri stor Diodes (SIDAC) Description: The NT E6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered sw itches with greater power handling capa bilities than standard DIACs. Upon appl ication of a voltage exceeding the SIDA C breakover voltage point, the SIDAC sw itches on through a negative resistance region to a low o.
Manufacture

NTE Electronics

Datasheet
Download NTE6419 Datasheet




 NTE6419
NTE6415 thru NTE6419
Bidirectional Thyristor Diodes (SIDAC)
Description:
The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with
greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding
the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to
a low on–state voltage. Conduction will continue until the current is interrupted or drops below the
minimum holding current of the device.
Features:
D Especially Effective in AC Circuits
D Switching Function Directly with the AC Power Line
D Applicable for Various Pulse Generators
Applications:
D High Voltage Lamp Ignitors
D Natural Gas Ignitors
D Gas Oil Ignitors
D High Voltage Power Supplies
D Xenon Ignitors
D Overvoltage Protection
D Pulse generators
D Fluorescent Lighting Ignitors
Absolute Maximum Ratings:
Peak Off Voltage, VDRM
NTE6415, NTE6416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
NTE6417, NTE6418, NTE6419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Effective Current (TA = +40°C, 50Hz, Sine Wave, Conducting Angle = 180°), IT . . . . . . . . . . . . . . 1A
Surge Current (50Hz, Non–Repeated 1 Cycle Sine wave, Peak Value), ITSM . . . . . . . . . . . . . . . 13A
Peak Current (TA = +40°C, Pulse Width = 10µs, f = 1kHz), ITRM . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Current Rise Rate, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +125°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15°C/W
Lead Temperature (During Soldering, 5mm from case, 5sec max), TL . . . . . . . . . . . . . . . . . . +250°C




 NTE6419
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Breakover Voltage
NTE6415
NTE6416
VBO 50Hz Sine wave, IB = 0
NTE6417
NTE6418
NTE6419
Peak Off Current
Breakover Current
Holding Current
ON Voltage
Switching Resistance
IDRM
IBO
IH
VT
RS
50Hz Sine Wave, V = Rated VDRM
50Hz Sine Wave
50Hz Sine Wave
IT = 1A
50Hz Sine Wave
Min Typ Max Unit
45 60 V
55 65 V
95 113 V
104 118 V
110 125 V
– – 10 µA
– – 0.5 mA
50 mA
– – 1.5 V
0.1 – – k
.944 (24.0)
Min
.295 (7.5)
Max
.051 (1.29)
.188 (4.78)








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