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Bipolar Output. NTE7141 Datasheet

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Bipolar Output. NTE7141 Datasheet
















NTE7141 Output. Datasheet pdf. Equivalent













Part

NTE7141

Description

Integrated Circuit Dual BIMOS Operational Amplifier w/MOSFET Input / Bipolar Output



Feature


NTE7141 Integrated Circuit Dual BIMOS Op erational Amplifier w/MOSFET Input, Bip olar Output Description: The NTE7141 is a dual, operational amplifier in an 8 Lead Mini–DIP type package that com bines the advantages of MOS and bipolar transistors on the same monolithic chi p. The gate–protected MOSFET (PMOS) i nput transistors provide high input imp redance and a wide commo.
Manufacture

NTE Electronics

Datasheet
Download NTE7141 Datasheet


NTE Electronics NTE7141

NTE7141; n–mode input voltage range (typically to 0.5V below the negative supply rail) . The bipolar output transistors allow a wide output voltage swing and provide a high output current capability. Feat ures: D Internally Compensated D MOSFET Input Stage: Very High Input Impedance Very Low Input Current Wide Common–M ode Input Voltage Range Rugged Input St age – Bipolar Diode Pr.


NTE Electronics NTE7141

otected D Directly Replaces Industry Typ e 1458 in Most Applications D Operation From 4V–to–36V Single or Dual Supp lies D Characterized for ±15V Operatio n for TTL Supply Systems with Operation down to 4V D Wide Bandwidth D High Vol tage–Follower Slew Rate D Output Swin gs to Within 0.5V of Negative Supply at V+ = 5V, V– = 0 Applications: D Grou nd–Referenced Single–Supply.


NTE Electronics NTE7141

Amplifiers in Automobile and Portable I nstrumentation D Sample and Hold Amplif iers D Long–Duration Timers/Multivibr ators (Microseconds – Minutes – Hou rs) D Photocurrent Instrumentation D Ac tive Filters D Intrusion Alarm Systems D Comparators D Instrumentation Amplifi ers D Function Generators D Power Suppl ies Absolute Maximum Ratings: DC Suppl y Voltage (Between V+ an.





Part

NTE7141

Description

Integrated Circuit Dual BIMOS Operational Amplifier w/MOSFET Input / Bipolar Output



Feature


NTE7141 Integrated Circuit Dual BIMOS Op erational Amplifier w/MOSFET Input, Bip olar Output Description: The NTE7141 is a dual, operational amplifier in an 8 Lead Mini–DIP type package that com bines the advantages of MOS and bipolar transistors on the same monolithic chi p. The gate–protected MOSFET (PMOS) i nput transistors provide high input imp redance and a wide commo.
Manufacture

NTE Electronics

Datasheet
Download NTE7141 Datasheet




 NTE7141
NTE7141
Integrated Circuit
Dual BIMOS Operational Amplifier
w/MOSFET Input, Bipolar Output
Description:
The NTE7141 is a dual, operational amplifier in an 8–Lead Mini–DIP type package that combines the
advantages of MOS and bipolar transistors on the same monolithic chip. The gate–protected MOS-
FET (PMOS) input transistors provide high input impredance and a wide common–mode input volt-
age range (typically to 0.5V below the negative supply rail). The bipolar output transistors allow a wide
output voltage swing and provide a high output current capability.
Features:
D Internally Compensated
D MOSFET Input Stage:
Very High Input Impedance
Very Low Input Current
Wide Common–Mode Input Voltage Range
Rugged Input Stage – Bipolar Diode Protected
D Directly Replaces Industry Type 1458 in Most Applications
D Operation From 4V–to–36V Single or Dual Supplies
D Characterized for ±15V Operation for TTL Supply Systems with Operation down to 4V
D Wide Bandwidth
D High Voltage–Follower Slew Rate
D Output Swings to Within 0.5V of Negative Supply at V+ = 5V, V– = 0
Applications:
D Ground–Referenced Single–Supply Amplifiers in Automobile and Portable Instrumentation
D Sample and Hold Amplifiers
D Long–Duration Timers/Multivibrators (Microseconds – Minutes – Hours)
D Photocurrent Instrumentation
D Active Filters
D Intrusion Alarm Systems
D Comparators
D Instrumentation Amplifiers
D Function Generators
D Power Supplies




 NTE7141
Absolute Maximum Ratings:
DC Supply Voltage (Between V+ and VTerminals) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 to 36V or ±2 to ±18V
DifferentialMode Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±8V
CommonMode DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V+ +8V) to (V– –0.5V)
InputTerminal Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 630mW
Derate Linearly Above +55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C
Lead Temperature (During Soldering, 1/16from case, 10sec max), TL . . . . . . . . . . . . . . . . . +265°C
Output ShortCircuit Duration (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited
Note 1. Short circuit may be applied to GND or to either supply. Temperature and/or supply voltages
must be limited to keep dissipation within maximum rating.
Electrical Characteristics: (V+ = +15V, V= 15V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Input Offset Voltage
Input Offset Current
Input Current
LargeSignal Voltage Gain
|VIO|
|IIO|
II
AOL
TA = +25°C
TA = 40° to +85°C
TA = +25°C
TA = +85°C
TA = +25°C
TA = +85°C
Note 2
TA = +25°C
5
10
0.5
32
10
640
20k 100k
86 100
15
30
50
TA = 40° to +85°C
63k
96
CommonMode Rejection Ratio
CMRR TA = +25°C
32 320
70 90
TA = 40° to +85°C
32
90
CommonMode InputVoltage
Range
VICR TA = +25°C
15 15.5 +11
to
+12.5
TA = 40° to +85°C
– –15
to
+12.3
Power Supply Rejection Ratio
VIO/V TA = +25°C
PSSR
100 150
76 80
VIO/V TA = 40° to +85°C
PSSR
150
76
Unit
mV
mV
pA
pA
pA
pA
V/V
dB
V/V
dB
µV/V
dB
µV/V
dB
V
V
µV/V
dB
µV/V
dB
Note 2. VO = 26VPP, +12V, 14V and RL = 2k.




 NTE7141
Electrical Characteristics (Cont’d): (V+ = +15V, V= 15V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Output Voltage
Supply Current, For Both Amps
Total Device Dissipation
Temperature Coefficient of
Input Offset Voltage
VOM+
VOM
VOM+
VOM
I+
PD
VIO/T
TA = +25°C, RL = 2k
TA = +25°C, Note 3
TA = 40° to +85°C, RL = 2k
TA = +25°C
TA = 40° to +85°C
TA = +25°C
TA = 40° to +85°C
TA = 40° to +85°C
+12 +13
14 14.4
0.4 0.13
+12.4
– –14.2
8 12
8.4
240 360
252
15
V
V
V
V
V
mA
mA
mW
mW
µA/°C
Input Resistance
Input Capacitance
Output Resistance
Equivalent Wideband Input Noise
Voltage
RI TA = +25°C
CI TA = +25°C
RO TA = +25°C
en TA = +25°C, f = 1kHz
RS = 100
f = 10kHz
1.5
T
4 pF
60
40 nV/Hz
12 nV/Hz
ShortCircuit Current to Opposite
Supply
Source
Sink
GainBandwidth Product
Slew Rate
Transient Response:
Rise Time
Overshoot
IOM+
IOM
fT
SR
TA = +25°C
TA = +25°C
TA = +25°C
tr TA = +25°C, RL = 2k, CL = 100pF
40
11
4.5
9
0.08
10
mA
mA
MHz
V/µs
µs
%
Setting Time at 10VPP
1mV
10mV
ts TA = +25°C, RL = 2k, CL = 100pF,
Voltage Follower
4.5
1.4
µs
µs
Crosstalk
CT TA = +25°C, f = 1kHz
120
dB
Note 3. V+ = 5V, V= GND, ISink = 200µA.
Electrical Characteristics: (TA = +25°C, V+ = +5V, V= 5V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Input Offset Voltage
Input Offset Current
Input Current
|VIO|
|IIO|
II
5
0.1
2
Input Resistance
RI
1
LargeSignal Voltage Gain
AOL
100k
100
CommonMode Rejection Ratio
CMRR
32 320
70 90
Unit
mV
pA
pA
T
V/V
dB
µV/V
dB




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