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P2N2222A Datasheet, Equivalent, Amplifier Transistor.

NPN Amplifier Transistor

NPN Amplifier Transistor

 

 

 

Part P2N2222A
Description NPN Amplifier Transistor
Feature P2N2222A Amplifier Transistors NPN Silic on Features
• These are Pb−Free Dev ices* MAXIMUM RATINGS (TA = 25°C unle ss otherwise noted) Characteristic Sy mbol Value Collector −Emitter Voltag e VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6.
0 Collector Current − Continuous IC 600 Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.
0 Unit Vdc Vdc Vdc mAdc mW mW/°C Tota l Device Dissipation @ TC = 25°C Derat e above 25°C PD 1.
5 W 12 mW/°C Oper ating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C TH ERMAL CHARACTERISTICS Characteristi .
Manufacture ON Semiconductor
Datasheet
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Part P2N2222A
Description NPN Amplifier Transistor
Feature P2N2222A Amplifier Transistors NPN Silic on Features
• These are Pb−Free Dev ices* MAXIMUM RATINGS (TA = 25°C unle ss otherwise noted) Characteristic Sy mbol Value Collector −Emitter Voltag e VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6.
0 Collector Current − Continuous IC 600 Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.
0 Unit Vdc Vdc Vdc mAdc mW mW/°C Tota l Device Dissipation @ TC = 25°C Derat e above 25°C PD 1.
5 W 12 mW/°C Oper ating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C TH ERMAL CHARACTERISTICS Characteristi .
Manufacture ON Semiconductor
Datasheet
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P2N2222A

P2N2222A
P2N2222A

P2N2222A

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