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P2N2222A Datasheet, Equivalent, Amplifier Transistor.NPN Amplifier Transistor NPN Amplifier Transistor |
| Part | P2N2222A |
|---|---|
| Description | NPN Amplifier Transistor |
| Feature | P2N2222A
Amplifier Transistors
NPN Silic on
Features
• These are Pb−Free Dev ices* MAXIMUM RATINGS (TA = 25°C unle ss otherwise noted) Characteristic Sy mbol Value Collector −Emitter Voltag e VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6. 0 Collector Current − Continuous IC 600 Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5. 0 Unit Vdc Vdc Vdc mAdc mW mW/°C Tota l Device Dissipation @ TC = 25°C Derat e above 25°C PD 1. 5 W 12 mW/°C Oper ating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C TH ERMAL CHARACTERISTICS Characteristi . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | P2N2222A |
|---|---|
| Description | NPN Amplifier Transistor |
| Feature | P2N2222A
Amplifier Transistors
NPN Silic on
Features
• These are Pb−Free Dev ices* MAXIMUM RATINGS (TA = 25°C unle ss otherwise noted) Characteristic Sy mbol Value Collector −Emitter Voltag e VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6. 0 Collector Current − Continuous IC 600 Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5. 0 Unit Vdc Vdc Vdc mAdc mW mW/°C Tota l Device Dissipation @ TC = 25°C Derat e above 25°C PD 1. 5 W 12 mW/°C Oper ating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C TH ERMAL CHARACTERISTICS Characteristi . |
| Manufacture | ON Semiconductor |
| Datasheet |
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