P2N2222A Transistor Datasheet pdf - Amplifier Transistor. Equivalent, Catalog

Part	P2N2222A
Description	NPN Amplifier Transistor
Manufacture	ON Semiconductor
Datasheet	Download P2N2222A Datasheet

P2N2222A

Amplifier Transistors

NPN Silicon

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Characteristic

Symbol Value

Collector −Emitter Voltage

VCEO

Collector −Base Voltage

VCBO

Emitter−Base Voltage

VEBO

6.0

Collector Current − Continuous

IC 600

Total Device Dissipation @ TA = 25°C

Derate above 25°C

PD 625

5.0

Unit

Vdc

mAdc

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD 1.5 W

12 mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−55 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200 °C/W

Thermal Resistance, Junction to Case

RqJC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

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COLLECTOR

BASE

EMITTER

TO−92

CASE 29

STYLE 17

123

STRAIGHT LEAD

BULK PACK

12 3

BENT LEAD

TAPE & REEL

AMMO PACK

MARKING DIAGRAM

P2N2

222A

AYWW G

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

January, 2013 − Rev. 7

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device

Package

Shipping†

P2N2222AG

TO−92

5000 Units/Bulk

(Pb−Free)

P2N2222ARL1G TO−92 2000/Tape & Ammo

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

P2N2222A/D

P2N2222A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

Collector −Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

(VCB = 60 Vdc, IE = 0, TA = 150°C)

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

Collector Cutoff Current

(VCE = 10 V)

Base Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)

(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)

(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1)

(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)

Collector −Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

Base −Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product (Note 2)

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)

Noise Figure

(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

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Symbol

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICEX

ICBO

IEBO

ICEO

IBEX

hFE

VCE(sat)

VBE(sat)

Cobo

Cibo

hie

hre

hfe

hoe

rb′Cc

Min

6.0

−

100

−

0.6

−

300

−

2.0

0.25

−

5.0

−

Max Unit

Vdc

−

Vdc

−

Vdc

−

nAdc

mAdc

0.01

10 nAdc

nAdc

−

300

−

Vdc

0.3

1.0

Vdc

1.2

2.0

−

8.0

1.25

8.0

4.0

300

375

200

150

4.0

MHz

X 10− 4

−

mMhos

P2N2222A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

(VCC = 30 Vdc, VBE(off) = −2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)

Storage Time

Fall Time

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc) (Figure 2)

Min Max

− 10

− 25

− 225

− 60

Unit

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+16 V

- 2 V

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

< 2 ns

1 kW

Figure 1. Turn−On Time

+ 30 V

200

+16 V

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

CS* < 10 pF

-14 V

< 20 ns

1N914

Scope rise time < 4 ns

*Total shunt capacitance of test jig,

connectors, and oscilloscope.

- 4 V

Figure 2. Turn−Off Time

+ 30 V

200

CS* < 10 pF

1000

700

500

300

200

100

0.1

0.2 0.3 0.5 0.7 1.0

TJ = 125°C

25°C

-55°C

VCE = 1.0 V

VCE = 10 V

2.0 3.0 5.0 7.0 10

20 30

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

50 70 100

200 300 500 700 1.0 k

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Amplifier Transistor. P2N2222A Datasheet

Amplifier Transistor. P2N2222A Datasheet

P2N2222A Transistor. Datasheet pdf. Equivalent

P2N2222A Transistor. Datasheet pdf. Equivalent

P2N2222A

NPN Amplifier Transistor

ON Semiconductor

P2N2222A

NPN Amplifier Transistor

ON Semiconductor