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Amplifier Transistor. P2N2222A Datasheet

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Amplifier Transistor. P2N2222A Datasheet






P2N2222A Transistor. Datasheet pdf. Equivalent




P2N2222A Transistor. Datasheet pdf. Equivalent





Part

P2N2222A

Description

NPN Amplifier Transistor

Manufacture

ON Semiconductor

Datasheet
Download P2N2222A Datasheet


ON Semiconductor P2N2222A

P2N2222A; P2N2222A Amplifier Transistors NPN Silic on Features • These are Pb−Free Dev ices* MAXIMUM RATINGS (TA = 25°C unle ss otherwise noted) Characteristic Sy mbol Value Collector −Emitter Voltag e VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6.0 Collector Current − Continuous IC 600 Total Device Dissipation @ TA = 25°C Derate above 25°C PD 6.


ON Semiconductor P2N2222A

25 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Tempera ture Range TJ, Tstg −55 to +150 ° C THERMAL CHARACTERISTICS Characteris tic Symbol Max Unit Thermal Resistan ce, Junction to Ambient RqJA 200 °C/ W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Stresse.


ON Semiconductor P2N2222A

s exceeding Maximum Ratings may damage t he device. Maximum Ratings are stress r atings only. Functional operation above the Recommended Operating Conditions i s not implied. Extended exposure to str esses above the Recommended Operating C o .



Part

P2N2222A

Description

NPN Amplifier Transistor

Manufacture

ON Semiconductor

Datasheet
Download P2N2222A Datasheet




 P2N2222A
P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector Emitter Voltage
VCEO
40
Collector Base Voltage
VCBO
75
EmitterBase Voltage
VEBO
6.0
Collector Current Continuous
IC 600
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD 625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
P2N2
222A
AYWW G
G
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
January, 2013 Rev. 7
1
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
P2N2222AG
TO92
5000 Units/Bulk
(PbFree)
P2N2222ARL1G TO92 2000/Tape & Ammo
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2222A/D





 P2N2222A
P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)
Collector Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (Note 2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
http://onsemi.com
2
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
ICEO
IBEX
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
rbCc
NF
Min
40
75
6.0
35
50
75
35
100
50
40
0.6
300
2.0
0.25
50
75
5.0
25
Max Unit
Vdc
Vdc
Vdc
nAdc
10
mAdc
0.01
10
10 nAdc
nAdc
10
nAdc
20
300
Vdc
0.3
1.0
Vdc
1.2
2.0
8.0
25
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
MHz
pF
pF
kW
X 104
mMhos
ps
dB





 P2N2222A
P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
td
tr
ts
tf
Min Max
10
25
225
60
Unit
ns
ns
ns
ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+16 V
0
- 2 V
1.0 to 100 ms,
DUTY CYCLE 2.0%
< 2 ns
1 kW
Figure 1. TurnOn Time
+ 30 V
200
+16 V
1.0 to 100 ms,
DUTY CYCLE 2.0%
CS* < 10 pF
0
-14 V
< 20 ns
1k
1N914
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
- 4 V
Figure 2. TurnOff Time
+ 30 V
200
CS* < 10 pF
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2 0.3 0.5 0.7 1.0
TJ = 125°C
25°C
-55°C
VCE = 1.0 V
VCE = 10 V
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
50 70 100
200 300 500 700 1.0 k
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3



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