switching transistors. 2N2222 Datasheet

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2N2222 Datasheet
Recommendation 2N2222 Datasheet
Part 2N2222
Description NPN switching transistors
Feature 2N2222; DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors Product speci.
Manufacture Philips
Datasheet
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Philips 2N2222
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2222; 2N2222A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 29



Philips 2N2222
Philips Semiconductors
NPN switching transistors
Product specification
2N2222; 2N2222A
FEATURES
High current (max. 800 mA)
Low voltage (max. 40 V).
APPLICATIONS
Linear amplification and switching.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
2
MAM264
3
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
2N2222
2N2222A
VCEO
collector-emitter voltage
2N2222
2N2222A
IC collector current (DC)
Ptot total power dissipation
hFE DC current gain
fT transition frequency
2N2222
2N2222A
toff turn-off time
CONDITIONS
open emitter
open base
Tamb 25 °C
IC = 10 mA; VCE = 10 V
IC = 20 mA; VCE = 20 V; f = 100 MHz
ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA
MIN. MAX. UNIT
60 V
75 V
30 V
40 V
800 mA
500 mW
75
250
MHz
300
MHz
250 ns
1997 May 29
2



Philips 2N2222
Philips Semiconductors
NPN switching transistors
Product specification
2N2222; 2N2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
2N2222
2N2222A
collector-emitter voltage
2N2222
2N2222A
emitter-base voltage
2N2222
2N2222A
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C
Tcase 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
MIN.
MAX.
UNIT
60 V
75 V
30 V
40 V
5V
6V
800 mA
800 mA
200 mA
500 mW
1.2 W
65
+150
°C
200 °C
65
+150
°C
VALUE
350
146
UNIT
K/W
K/W
1997 May 29
3





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