(PDF) 2N2222 Datasheet PDF | Philips





2N2222 Datasheet PDF

Part Number 2N2222
Description NPN switching transistors
Manufacture Philips
Total Page 8 Pages
PDF Download Download 2N2222 Datasheet PDF

Features: Datasheet pdf DISCRETE SEMICONDUCTORS DATA SHEET M3D 125 2N2222; 2N2222A NPN switching tran sistors Product specification Supersed es data of September 1994 File under Di screte Semiconductors, SC04 1997 May 29 Philips Semiconductors Product speci fication NPN switching transistors FE ATURES • High current (max. 800 mA) Low voltage (max. 40 V). APPLICATION S • Linear amplification and switchin g. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP compleme nt: 2N2907A. 3 2N2222; 2N2222A PINNING PIN 1 2 3 emitter base collector, conn ected to case DESCRIPTION handbook, ha lfpage 1 3 2 MAM264 2 1 Fig.1 Simpl ified outline (TO-18) and symbol. QUIC K REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2222 2N2222A V CEO collector-emitter voltage 2N2222 2N 2222A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency 2N2222 2N222 2A toff turn-off time ICon = 150 mA; IB on = 15 mA; IBoff = −15 mA Tamb ≤ 25 °C IC = 10 mA; VCE = 10 V IC = 20 mA.

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2N2222 datasheet
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2222; 2N2222A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 29

2N2222 datasheet
Philips Semiconductors
NPN switching transistors
Product specification
2N2222; 2N2222A
FEATURES
High current (max. 800 mA)
Low voltage (max. 40 V).
APPLICATIONS
Linear amplification and switching.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
2
MAM264
3
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
2N2222
2N2222A
VCEO
collector-emitter voltage
2N2222
2N2222A
IC collector current (DC)
Ptot total power dissipation
hFE DC current gain
fT transition frequency
2N2222
2N2222A
toff turn-off time
CONDITIONS
open emitter
open base
Tamb 25 °C
IC = 10 mA; VCE = 10 V
IC = 20 mA; VCE = 20 V; f = 100 MHz
ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA
MIN. MAX. UNIT
60 V
75 V
30 V
40 V
800 mA
500 mW
75
250
MHz
300
MHz
250 ns
1997 May 29
2





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