MOS Type. 2SJ680 Datasheet

2SJ680 Type. Datasheet pdf. Equivalent

2SJ680 Datasheet
Recommendation 2SJ680 Datasheet
Part 2SJ680
Description Field Effect Transistor / Silicon P-Channel MOS Type
Feature 2SJ680; www.DataSheet4U.com 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V) 2S.
Manufacture Toshiba
Datasheet
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Toshiba 2SJ680
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2SJ680
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V)
2SJ680
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 µA (max) (VDS = 200 V)
Enhancement model: Vth = 1.5 ~ 3.5 V (VDS = 10 V, ID = 1 mA)
6.5±0.2
5.2±0.2
0.9
2.3 2.3
Unit: mm
0.6 MAX.
1.1±0.2
0.6 MAX
Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
200
200
±20
2.5
10
20
97.5
2.5
2.0
150
55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
123
0.8 MAX.
1.1 MAX.
0.6±0.15
0.6±0.15
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
6.25
125
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = −25.2 mH, IAR = −2.5 A RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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Toshiba 2SJ680
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2SJ680
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −200 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −10 V, ID = −1.5 A
VDS = −10 V, ID = −1.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±10
⎯ ⎯ −100
200
1.5 ⎯ −3.5
1.6 2.0
1.0 2.0
410
40
145
µA
µA
V
V
S
pF
tr 0 V
VGS
ton 10 V
ID = −1.5 A VOUT
20
45
RL = 66.7
ns
tf 15
toff
Duty <= 1%, tw = 10 µs VDD ∼− 100 V
85
Qg VDD ∼− 160 V, VGS = −10 V,
Qgs ID = −2.5 A
Qgd
10
6 nC
4
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = −2.5 A, VGS = 0 V
IDR = −2.5 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯ −2.5
A
⎯ ⎯ −10 A
⎯ ⎯ 2.0 V
135
ns
0.81
µC
Marking
J680
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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Toshiba 2SJ680
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ID – VDS
2.0
Common source
8
6 5 4.8
Tc = 25°C
pulse test
1.6
10
15
4.6
1.2
0.8
0.4
4.4
4.2
VGS = −4 V
0
0 1 2 3 4 5
Drain-source voltage VDS (V)
10
Common source
VDS = −10 V
8 pulse test
ID – VGS
Tc = −55°C
6 25
4 100
2
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
10
Common source
VDS = −10 V
pulse test
Yfs– ID
Tc = −55°C
25
100
1
2SJ680
5
10
4 15
3
2
1
ID – VDS
6
Common source
Tc = 25°C, pulse test
8
5.75
5.5
5.25
5
4.8
4.6
4.4
4.2
VGS = −4 V
0
0 10 20 30 40 50
Drain-source voltage VDS (V)
10
8
6
4
2
0
0
VDS – VGS
Common source
Tc = 25°C
pulse test
ID = −2.5 A
1.5
0.8
4 8 12 16
Gate-source voltage VGS (V)
20
RDS (ON) – ID
10
Common source
Tc = 25°C
pulse test
VGS = −10 V
15
1
0.1
0.1
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Drain current ID (A)
10
0.1
0.1
1
Drain current ID (A)
10
3
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