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TC58NVG0S3AFT05
1 GBit CMOS NAND EPROM
Description
www.DataSheet4U.com TC58NVG0S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BITS) CMOS NAND EEPROM DESCRIPTION The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The devic...
Toshiba
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