Power F-MOS FETs
2SK1606
www.DataSheet4U.com Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic
unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
s Applications
16.7±0.3
7.5±0.2
q High-speed switching (switching power supply) q For high-frequen...
