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IRFS630A

Advanced Power MOSFET

Description

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) 1 IRFS630A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 6.5 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings...

Fairchild

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