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HAT2096H

Hitachi
Part Number HAT2096H
Manufacturer Hitachi
Description Silicon N-Channel Power MOSFET
Published Aug 19, 2005
Detailed Description HAT2096H Silicon N Channel Power MOS FET Power Switching ADE-208-1431B (Z) 3rd. Edition Aug. 2002 Features • Capable of...
Datasheet PDF File HAT2096H PDF File

HAT2096H
HAT2096H

Overview
HAT2096H Silicon N Channel Power MOS FET Power Switching ADE-208-1431B (Z) 3rd.
Edition Aug.
2002 Features • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.
2 mΩ typ.
(at VGS = 10 V) Outline LFPAK 5 5 D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 HAT2096H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 40 160 40 20 150 –55 to...


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