N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
Description
STP80N05-09
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
TYPE STP80N05-09
s s s s s s
VDS S 50 V
RDS(o n) < 0.009 Ω
ID 80 A
ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE
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3
APPLICATIONS s SYNCROUNOUS RECTIFIERS s HIGH CU...
