JAN2N5415 Datasheet: (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR





JAN2N5415 (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR Datasheet

Part Number JAN2N5415
Description (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR
Manufacture Microsemi Corporation
Total Page 2 Pages
PDF Download Download JAN2N5415 Datasheet PDF

Features: TECHNICAL DATA PNP LOW POWER SILICON TRA NSISTOR Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV MAXIM UM RATINGS Ratings Collector-Emitter Vo ltage Collector-Base Voltage Emitter-Ba se Voltage Collector Current Total Powe r Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N5415 200 200 2N5416 300 350 Units Vdc Vdc Vdc Adc W W 0 C Unit C/W 6.0 1 .0 0.75 10 -65 to +200 Max. 17.5 TO- 5 * 2N5415, 2N5416 THERMAL CHARACTERISTI CS Characteristics Symbol Thermal Resis tance, Junction-to-Case RθJC 1) Derate linearly 4.28 mW/0C for TA > +250C 2) Derate linearly 57.1 mW/0C for TC > +25 0C 0 2N5415S, 2N5416S TO-39* (TO-205A D) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERIS TICS Collector-Emitter Cutoff Current V CE = 150 Vdc VCE = 200 Vdc VCE = 250 Vdc VCE = 300 Vdc Emitter-B.

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TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485
Devices
2N5415
2N5415S
2N5416
2N5416S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C
@ TC = +250C
VCEO
VCBO
VEBO
IC
PT
Operating & Storage Temperature Range Top, Tstg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 4.28 mW/0C for TA > +250C
2) Derate linearly 57.1 mW/0C for TC > +250C
2N5415 2N5416
200 300
200 350
6.0
1.0
0.75
10
-65 to +200
Max.
17.5
Units
Vdc
Vdc
Vdc
Adc
W
W
0C
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 150 Vdc
VCE = 200 Vdc
2N5415
2N5415
ICEO
VCE = 250 Vdc
2N5416
VCE = 300 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
Collector-Emitter Cutoff Current
2N5416
IEBO
VCE = 200 Vdc, VBE = 1.5 Vdc
2N5415
ICEX
VCE = 300 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
2N5416
VCB = 175 Vdc
2N5415
ICBO1
VCB = 280 Vdc
Collector-Base Cutoff Current
2N5416
VCB = 200 Vdc
2N5415
ICBO2
VCB = 350 Vdc
2N5416
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
TO- 5*
2N5415, 2N5416
2N5415S, 2N5416S
TO-39*
(TO-205AD)
*See appendix A for
package outline
Min. Max.
Unit
50 µAdc
1.0 mAdc
50 µAdc
1.0 mAdc
20 µAdc
µAdc
50 µAdc
50
50 µAdc
50
500 µAdc
500
120101
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