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2SK660

Part Number	2SK660
Manufacturer	NEC
Description	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
Published	Oct 8, 2005
Detailed Description	DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CO...
Datasheet	2SK660 PDF File

Overview

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM.
FEATURES • Compact package • High forward transfer admittance | yfs | = 1200 µS TYP.
(VDS = 5 V, ID = 0 µA) • Low capacitance Ciss = 4.
5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) • Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK660 PACKAGE SST ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature Note VGS = –1.
0 V Remark Please take care of ESD (Electro...

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