POWER TRANSISTOR. 2SB1453 Datasheet

2SB1453 TRANSISTOR. Datasheet pdf. Equivalent


Part 2SB1453
Description PNP SILICON EPITAXIAL POWER TRANSISTOR
Feature DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCH.
Manufacture NEC
Datasheet
Download 2SB1453 Datasheet


DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIA 2SB1453 Datasheet
Recommendation Recommendation Datasheet 2SB1453 Datasheet




2SB1453
DATA SHEET
SILICON TRANSISTOR
2SB1453
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SB1453 is a power transistor that can directly drive from
the IC output. This transistor is ideal for motor drivers and solenoid
drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High DC current amplifier ratio
hFE 100 (VCE = 5 V, IC = 0.5 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
Ratings
60
60
7.0
3.0
6.0
1.0
25
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16129EJ2V0DS00 (2nd edition)
Date Published July 2002 N CP(K)
Printed in Japan
©
21090928



2SB1453
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 60 V, IE = 0
DC current gain
hFE1** VCE = 5.0 V, IC = 0.5 A
DC current gain
hFE2** VCE = 5 V, IC = 3 A
Collector saturation voltage VCE(sat)** IC = 3.0 A, IB = 300 mA
Base saturation voltage
VBE(sat)** IC = 3.0 A, IB = 300 mA
Gain bandwidth product
fT VCE = 5.0 V, IC = 0.5 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Turn-on time
Storage time
Fall time
ton IC = 2.0 A, IB1 = IB2 = 200 mA,
tstg RL = 15 , VCC ≅ −30 V
Refer to the test circuit.
tf
** Pulse test PW 350 µs, duty cycle 2%
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
2SB1453
MIN.
100
20
TYP.
5
80
0.4
1.7
0.5
MAX.
10
400
1.0
2.0
Unit
µA
V
V
MHz
pF
µs
µs
µs
Base current
waveform
Collector current
waveform
2 Data Sheet D16129EJ2V0DS







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