N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Description
STW16NA60
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STW16NA60
s s
V DSS 600 V
R DS(on) < 0.4 Ω
ID 16 A
s s s s s
TYPICAL RDS(on) = 0.33 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247
3 2 1
AP...