TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount
Designer's
MTD6P10E
Motorola Preferred Device
P–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy e...
