SILICON TRANSISTOR. BC32740 Datasheet

BC32740 TRANSISTOR. Datasheet pdf. Equivalent


Fairchild Semiconductor BC32740
BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage
: BC327
: BC328
VCEO
Collector-Emitter Voltage
: BC327
: BC328
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
1 TO-92
1. Collector 2. Base 3. Emitter
Value
-50
-30
-45
-25
-5
-800
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
: BC327
: BC328
IC= -10mA, IB=0
BVCES
Collector-Emitter Breakdown Voltage
: BC327
: BC328
IC= -0.1mA, VBE=0
BVEBO
ICES
hFE1
hFE2
VCE (sat)
VBE (on)
fT
Cob
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC327
: BC328
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IE= -10µA, IC=0
VCE= -45V, VBE=0
VCE= -25V, VBE=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA
IC= -500mA, IB= -50mA
VCE= -1V, IC= -300mA
VCE= -5V, IC= -10mA, f=20MHz
VCB= -10V, IE=0, f=1MHz
Min.
-45
-25
-50
-30
-5
100
40
Typ.
-2
-2
100
12
Max. Units
V
V
V
V
V
-100
-100
630
nA
nA
-0.7 V
-1.2 V
MHz
pF
hFE Classification
Classification
hFE1
hFE2
16
100 ~ 250
60-
25
160 ~ 400
100-
40
250 ~ 630
170-
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002


BC32740 Datasheet
Recommendation BC32740 Datasheet
Part BC32740
Description PNP EPITAXIAL SILICON TRANSISTOR
Feature BC32740; BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low po.
Manufacture Fairchild Semiconductor
Datasheet
Download BC32740 Datasheet




Fairchild Semiconductor BC32740
Typical Characteristics
-500
-400
-300
IB = -
IB =
IB
I
B=5-I.=B4-0I=.m4B-5.3=-mI0AB.3m5-A=.m02A-m.A52mA.0AmA
IB = - 1.5mA
-200
IB = - 1.0mA
PT = 600mW
IB = - 0.5mA
-100
IB = 0
-0
-1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1000
100
10
PULSE
VCE = - 2.0V
- 1.0V
1
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
-1000
-1000
-100
VCE = -1V
PULSE
-10
-1
-0.1
-0.4
-0.5 -0.6 -0.7 -0.8
VBE[V], BASE-EMITTER VOLTAGE
-0.9
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
-20
-16
I
B
=
-
80µA
IB= -
70µA
IB= -
60µA
IB = - 50µA
-12 I B = - 40µA
-8 IB = - 30µA
P
T
=
600mW
IB = - 20µA
-4
IB = - 10µA
IB = 0
-10 -20 -30 -40 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 2. Static Characteristic
-10
IC = 10 IB
PULSE
-1 VCE(sat)
-0.1
VBE(sat)
-0.01
-0.1
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1000
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
VCE = -5.0V
100
10
-1
-10 -100
IC[mA], COLLECTOR CURRENT
Figure 6. Gain Bandwidth Product
Rev. B1, August 2002



Fairchild Semiconductor BC32740
Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B1, August 2002







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