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AS4C1M16F5 Datasheet, Equivalent, CMOS DRAM.5V 1M x 16 CMOS DRAM 5V 1M x 16 CMOS DRAM |
| Part | AS4C1M16F5 |
|---|---|
| Description | 5V 1M x 16 CMOS DRAM |
| Feature | August 2001
®
AS4C1M16F5
5V 1M×16 CM OS DRAM (fast-page mode) Features
• O rganization: 1,048,576 words × 16 bits • High speed - 45/50/60 ns RAS acces s time - 20/20/25 ns fast page cycle ti me - 10/12/15 ns CAS access time • Lo w power consumption - Active: 880 mW ma x (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ • Fast page mode • 1024 re fresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, t hree-state DQ • JEDEC standard packag e and pinout - 400 mil, 42-pin SOJ - 40 0 mil, 44/50-pin TSOP 2 • 5V power su pply • Industrial and commercial te . |
| Manufacture | Alliance Semiconductor |
| Datasheet |
| Part | AS4C1M16F5 |
|---|---|
| Description | 5V 1M x 16 CMOS DRAM |
| Feature | August 2001
®
AS4C1M16F5
5V 1M×16 CM OS DRAM (fast-page mode) Features
• O rganization: 1,048,576 words × 16 bits • High speed - 45/50/60 ns RAS acces s time - 20/20/25 ns fast page cycle ti me - 10/12/15 ns CAS access time • Lo w power consumption - Active: 880 mW ma x (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ • Fast page mode • 1024 re fresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, t hree-state DQ • JEDEC standard packag e and pinout - 400 mil, 42-pin SOJ - 40 0 mil, 44/50-pin TSOP 2 • 5V power su pply • Industrial and commercial te . |
| Manufacture | Alliance Semiconductor |
| Datasheet |
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