August 2001
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AS4C1M16F5
5V 1M×16 CMOS DRAM (fast-page mode) Features
Organization: 1,048,576 words × 16 bits High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time Low power consumption - Active: 880 mW max (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ Fast page mode 1024 refresh cycles, 16 ms r...
