Silicon MOSFET. 2SK2433 Datasheet

2SK2433 MOSFET. Datasheet pdf. Equivalent

Part 2SK2433
Description N-Channel Silicon MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) Ordering number : ENN8353 2SK2433 2SK2433 Features • • • N-C.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SK2433 Datasheet

( DataSheet : www.DataSheet4U.com ) Ordering number : ENN83 2SK2433 Datasheet
Recommendation Recommendation Datasheet 2SK2433 Datasheet




2SK2433
( DataSheet : www.DataSheet4U.com )
Ordering number : ENN8353
2SK2433
2SK2433
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Low-voltage drive.
Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface
mountable package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0V
IG=±100µA, VDS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=15A
ID=15A, VGS=10V
ID=15A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Ratings
60
±20
30
120
40
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
min
60
±20
1.0
16.0
Ratings
typ
max
Unit
V
V
100 µA
±10 µA
2.0 V
27.0
S
30 40 m
40 55 m
1900
pF
500 pF
100 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
www.DataSheet4U.com
www.DataSheet4U.com
62005QA MS IM TB-00001456 No.8353-1/4



2SK2433
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Package Dimensions
unit : mm
7002-001
8.2
7.8
6.2
3
12
1.0 1.0
2.54 2.54
5.08
10.0
6.0
2SK2433
Symbol
td(on)
tr
td(off)
tf
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=30A, VGS=0V
Ratings
min typ max
Unit
15 ns
30 ns
335 ns
225 ns
1.0 1.5 V
Switching Time Test Circuit
0.6
0.3
0.6
1 : Gate
7.8 2 : Source
3 : Drain
SANYO : ZP
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=15A
RL=2
D VOUT
2SK2433
P.G 50S
ID -- VDS
50
40 3.5V
30
3.0V
20
10 2.5V
0
0 2 4 6 8 10
Drain-to-Source Voltage, VDS -- V ITR02136
yfs-- ID
2
VDS=10V
100
7
5
3
2
10
7
5
3
5 7 1.0
Tc= --25°C
75°C
25°C
2 3 5 7 10
2 3 5 7 100 2
Drain Current, ID -- A
ITR02138
ID -- VGS
60
VDS=10V
50
40
30
20
10
0
01234 56
Gate-to-Source Voltage, VGS -- V ITR02137
RDS(on) -- VGS
70
Tc=25°C
60 ID=15A
50
40
30
20
10
0
0 2 4 6 8 10 12 14
Gate-to-Source Voltage, VGS -- V ITR02139
No.8353-2/4





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