MOS FET. SP8M3 Datasheet

SP8M3 FET. Datasheet pdf. Equivalent

Part SP8M3
Description 4V Drive Nch + Pch MOS FET
Feature ( DataSheet : www.DataSheet4U.com ) SP8M3 Transistors 4V Drive Nch+Pch MOS FET SP8M3 zStructure Si.
Manufacture Rohm
Datasheet
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SP8M3
( DataSheet : www.DataSheet4U.com )
Transistors
4V Drive Nch+Pch MOS FET
SP8M3
SP8M3
zStructure
Silicon N-channel / P-channel MOS FET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8) (5)
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging specifications
Type
SP8M3
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw10µs, Duty cycle1%
2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP1
IS
ISP1
PD2
Tch
Tstg
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Limits
Nchannel Pchannel
30 30
20 20
±5.0
±4.5
±20 ±18
1.6 1.6
20 18
2
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W
Rev.B
1/5
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SP8M3
Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − 10 µA VGS=20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS − − 1 µA VDS=30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 2.5 V VDS=10V, ID=1mA
Static drain-source on-state
resistance
RDS
(on)
36 51
ID=5.0A, VGS=10V
52 73 mID=5.0A, VGS=4.5V
58 82
ID=5.0A, VGS=4V
Forward transfer admittance
Yfs 3.0
S ID=5.0A, VDS=10V
Input capacitance
Ciss
230
pF VDS=10V
Output capacitance
Coss 80 pF VGS=0V
Reverse transfer capacitance Crss
50 pF f=1MHz
Turn-on delay time
td (on) 6 ns ID=2.5A, VDD 15V
Rise time
tr 8 ns VGS=10V
Turn-off delay time
td (off)
22
ns RL=6.0
Fall time
tf 5 ns RG=10
Total gate charge
Qg 3.9 nC VDD 15V
Gate-source charge
Qgs 1.1 nC VGS=5V
Gate-drain charge
Qgd 1.4 nC ID=5.0A
Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.2 V IS=6.4A, VGS=0V
SP8M3
Rev.B
2/5





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