LATERAL MOSFET. MRF1513T1 Datasheet

MRF1513T1 MOSFET. Datasheet pdf. Equivalent

Part MRF1513T1
Description RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by .
Manufacture Motorola
Datasheet
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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF1513T1 Datasheet
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MRF1513T1
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
The MRF1513T1 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 3 Watts
Power Gain — 11 dB
Efficiency — 55%
D
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
G
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
S
RF Power Plastic Surface Mount Package
Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
Order this document
by MRF1513/D
MRF1513T1
520 MHz, 3 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1)
Calculated
based
on
the
formula
PD
=
TJ TC
RθJC
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
40
±20
2
31.25
0.25
–65 to +150
150
Max
4
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
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MRF1513T1
1



MRF1513T1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 60 µA)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz)
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz)
IDSS — —
IGSS — —
1 µAdc
1 µAdc
VGS(th)
1.0
1.7
2.1
Vdc
VDS(on)
0.65
Vdc
Ciss
Coss
Crss
— 33 —
— 16.5 —
— 2.2 —
pF
pF
pF
Gps 10 11 — dB
η 50 55 — %
MRF1513T1
2
MOTOROLA RF DEVICE DATA





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