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2SC3710A

Silicon NPN Transistor

Description

www.DataSheet4U.com 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1452A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emit...

Toshiba Semiconductor

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